Diamond single crystal, method for producing the same, and single crystal diamond tool
US-2015176155-A1 · Jun 25, 2015 · US
Diamond single crystal and production method thereof, and single crystal diamond tool
US10280531B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10280531-B2 |
| Application number | US-201615228423-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 4, 2016 |
| Priority date | Jun 29, 2012 |
| Publication date | May 7, 2019 |
| Grant date | May 7, 2019 |
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Abstract
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A method for producing a diamond single crystal includes implanting an ion other than carbon into a surface of a diamond single crystal seed substrate and thereby decreasing the transmittance of light having a wavelength of 800 nm, the surface having an off-angle of 7 degrees or less with respect to a {100} plane, and homoepitaxially growing a diamond single crystal on the ion-implanted surface of the seed substrate using a chemical vapor synthesis under synthesis conditions where the ratio N C /N H of the number of carbon-containing molecules N C to the number of hydrogen molecules N H in a gas phase is 10% or more and 40% or less, the ratio N N /N C of the number of nitrogen molecules N N to the number of carbon-containing molecules N C in the gas phase is 0.1% or more and 10% or less, and the seed substrate temperature T is 850° C. or more and less than 1000° C.
First claim
Opening claim text (preview).
The invention claimed is: 1. A diamond single crystal synthesized using a chemical vapor synthesis method and after annealing having an absorption coefficient of 25 cm −1 or more and 80 cm −1 or less for light having a wavelength of 350 nm. 2. A single crystal diamond tool, comprising a cutting edge made of a diamond single crystal synthesized using a chemical vapor synthesis method and after annealing having an absorption coefficient of 25 cm −1 or more and 80 cm −1 or less for light having a wavelength of 350 nm.
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Classifications
Diamond · CPC title
Diamond · CPC title
Self-sustaining carbon mass or layer with impregnant or other layer · CPC title
by ion-implantation · CPC title
the substrate being of the same materials as the epitaxial layer · CPC title
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- What does patent US10280531B2 cover?
- A method for producing a diamond single crystal includes implanting an ion other than carbon into a surface of a diamond single crystal seed substrate and thereby decreasing the transmittance of light having a wavelength of 800 nm, the surface having an off-angle of 7 degrees or less with respect to a {100} plane, and homoepitaxially growing a diamond single crystal on the ion-implanted surface…
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification C30B25/186. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue May 07 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).