Multi-step ion implantation

Patent metadata

Field	Value
Publication number	US-9828668-B2
Application number	US-201314239742-A
Country	US
Kind code	B2
Filing date	Feb 12, 2013
Priority date	Feb 12, 2013
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

Systems and methods for strengthening a sapphire part are described herein. One embodiment may take the form of a method including orienting a first surface of a sapphire member relative to an ion implantation device and performing a first implantation step. The implanting step may include directing ions at the first surface of the sapphire member to embed them under the first surface. The systems and methods may also include one or more of heating the sapphire member to diffuse the implanted ions into deeper layers of sapphire member, cooling the sapphire member, and performing at least a second implantation step directing ions at the first surface of the sapphire member to embed the ions under the first surface.

First claim

We claim:

1. A method comprising:
orienting a surface of a sapphire member relative to an ion implantation device;
performing a first implantation step comprising directing first ions at the surface of the sapphire member, the first ions having a first implantation energy and embedding under the surface into the sapphire member;
performing at least a second implantation step comprising directing second ions at the surface of the sapphire member, the second ions having a second implantation energy and embedding under the surface of the sapphire member at a different depth from the first ions; and
performing an atom bombardment step with aluminum atoms on the surface of the sapphire member.

2. The method of claim 1 , further comprising an annealing step performed on the surface of the sapphire member.

3. The method of claim 1 , wherein the bombardment step replaces atoms displaced by the first or second implantation steps.

4. The method of claim 3 , wherein the bombardment step replaces the atoms displaced by the first or second implantation steps with atoms of a same type.

5. The method of claim 1 , wherein the first and second ions are either single charged or double charged.

6. The method of claim 5 , wherein the first ions have a different charge from that of the second ions.

7. The method of claim 1 , further comprising heating the sapphire member to cause diffusion of the implanted ions.

8. A method comprising:
directing first ions at a surface of a sapphire member, the first ions having a first implantation energy and embedding under the surface into the sapphire member, the first ions comprising at least one of nitrogen ions, argon ions, titanium ions, or iron ions;
directing second ions at the surface of the sapphire member, the second ions having a second implantation energy and embedding under the surface of the sapphire member at a different depth from the first ions; and
atom bombarding the surface of the sapphire member with aluminum atoms.

9. The method of claim 8 , wherein the first ions and the second ions are implanted with a concentration gradient across the surface of the sapphire member.

10. The method of claim 8 , wherein the surface of the sapphire member comprises at least two zones that each have a different implanted ion concentration.

11. The method of claim 10 , wherein:
the surface of the sapphire member comprises a first zone and a second zone;
the first and second zones have a different implanted ion concentration;
the first zone comprises a peripheral edge of the surface of the sapphire member; and
the second zone comprises a center portion of the surface of the sapphire member.

12. The method of claim 8 , wherein the first ions and the second ions are directed at the surface to achieve an ion concentration of approximately between 10 13 and 10 19 ions/cm 2 .

13. The method of claim 8 , wherein directing the first ions and the second ions is performed using an ion implantation device.

14. The method of claim 8 , wherein the second ions comprise at least one of nitrogen ions, argon ions, titanium ions, or iron ions.

15. A method comprising:
directing first ions and second ions at a surface of a sapphire member, the first ions having a first implantation energy and embedding under the surface into the sapphire member, the second ions having a second implantation energy and embedding under the surface of the sapphire member at a different depth from the first ions, the first ions and the second ions including a different element set; and
atom bombarding the surface of the sapphire member with aluminum atoms.

16. The method of claim 15 , wherein directing the first ions and the second ions at the surface of the sapphire member creates a compressive stress in the sapphire member.

17. The method of claim 15 , further comprising smoothing a stress curve of the sapphire member.

18. The method of claim 15 , further comprising heating the sapphire member after directing the first ions and the second ions.

19. The method of claim 15 , wherein the first ions and the second ions have different charge levels.

Assignees

• Apple Inc

Inventors

• Memering Dale N
• Myers Scott A
• Weber Douglas J

Classifications

• C23C14/5806

  Thermal treatment · CPC title

• C30B31/22

  by ion-implantation · CPC title

• C30B29/20 Primary

  Aluminium oxides · CPC title

• C23C14/48 Primary

  Ion implantation · CPC title

• H01J37/3171

  for ion implantation · CPC title