Conversion of carbon into n-type and p-type doped diamond and structures

Patent metadata

Field	Value
Publication number	US-10196754-B2
Application number	US-201615231085-A
Country	US
Kind code	B2
Filing date	Aug 8, 2016
Priority date	Aug 7, 2015
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

First claim

What is claimed is:

1. A single crystal film comprising n-type doped diamond having a concentration of n-type dopants that exceeds thermodynamic solubility limits and p-type doped diamond having a concentration of p-type dopants that exceeds thermodynamic solubility limits, the n-type dopants comprising one or more selected from a group consisting of Ni, P, As, and Sb—.

2. The single crystal film of claim 1 , wherein the p-type dopants consist of one or more selected from another group consisting of boron and boron compounds.

3. The single crystal film of claim 1 , further comprising a p-n junction.

4. The single crystal film of claim 1 , wherein the n-type and p-type dopants are incorporated into electrically active substitutional sites of the n-type and p-type doped diamond, respectively.

5. A structure comprising the single crystal film of claim 1 and a substrate, the single crystal film being a film grown epitaxially on the substrate, the substrate being a template for epitaxial growth of the n-type and/or p-type doped diamond.

6. The single crystal film of claim 1 , wherein the n-type dopants are incorporated into electrically active substitutional sites of the n-type doped diamond.

7. A structure comprising the single crystal film of claim 1 and a substrate, the single crystal film being a film grown epitaxially on the substrate, the substrate being a template for epitaxial growth of the n-type doped diamond.

8. A single crystal film comprising:
a p-n junction comprising:
n-type doped diamond having a concentration of n-type dopants that exceeds thermodynamic solubility limits, and
p-type doped diamond having a concentration of p-type dopants that exceeds thermodynamic solubility limits.

9. The single crystal film of claim 8 , wherein the p-type dopants consist of one or more selected from a group consisting of boron and boron compounds.

10. The single crystal film of claim 9 , wherein the n-type dopants consist of one or more selected from another group consisting of Ni, P, As, and Sb—.

11. The single crystal film of claim 8 , wherein the n-type and p-type dopants are incorporated into electrically active substitutional sites of the n-type and p-type doped diamond, respectively.

12. A structure comprising the single crystal film of claim 8 and a substrate, the single crystal film being a film grown epitaxially on the substrate, the substrate being a template for epitaxial growth of the n-type and/or p-type doped diamond.

13. A single crystal film comprising:
n-type doped diamond having a concentration of n-type dopants that exceeds thermodynamic solubility limits; and
p-type doped diamond having a concentration of p-type dopants that exceeds thermodynamic solubility limits.

14. The single crystal film of claim 13 , wherein the p-type dopants consist of one or more selected from a group consisting of boron and boron compounds.

15. The single crystal film of claim 13 , wherein the p-type dopants are incorporated into electrically active substitutional sites of the p-type doped diamond.

16. The single crystal film of claim 13 , wherein the n-type dopants are incorporated into electrically active substitutional sites of the n-type doped diamond.

17. The single crystal film of claim 13 , further comprising a p-n junction.

18. The single crystal film of claim 17 , wherein the n-type dopants consist of one or more selected from another group consisting of Ni, P, As, and Sb—.

19. A structure comprising the single crystal film of claim 13 and a substrate, the single crystal film being a film grown epitaxially on the substrate, the substrate being a template for epitaxial growth of the n-type and/or p-type doped diamond.

Assignees

• Univ North Carolina State

Inventors

• Narayan Jagdish

Classifications

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P14/3816

  Pulsed laser beam · CPC title

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3462

  Nanowires · CPC title

• H10P14/3456

  Polycrystalline · CPC title