Method and apparatus for precleaning a substrate surface prior to epitaxial growth
US-2019382917-A1 · Dec 19, 2019 · US
Germanium
Germanium · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B29/08 |
| Official title | Germanium |
| Display label | Germanium |
| Total patents | 139 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 10 |
| 2016 | 19 |
| 2017 | 9 |
| 2018 | 12 |
| 2019 | 12 |
| 2020 | 11 |
| 2021 | 11 |
| 2022 | 12 |
| 2023 | 10 |
| 2024 | 8 |
| 2025 | 21 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of manufacturing a substrate with reduced threading dislocation density
US-10483351-B2 · Nov 19, 2019 · US
Method and apparatus for precleaning a substrate surface prior to epitaxial growth
US-10428441-B2 · Oct 1, 2019 · US
Method and apparatus for forming silicon film, germanium film, or silicon germanium film
US-2019267236-A1 · Aug 29, 2019 · US
Laser device and methods for manufacturing the same
US-10396528-B2 · Aug 27, 2019 · US
Method for determining preferential deposition parameters for a thin layer of III-V material
US-10354870-B2 · Jul 16, 2019 · US
Direct band gap group IV semiconductors and methods of preparing the same
US-10263136-B1 · Apr 16, 2019 · US
Semiconductor substrate and method of manufacturing thereof
US-2019103267-A1 · Apr 4, 2019 · US
Architectures Enabling Back Contact Bottom Electrodes For Semiconductor Devices
US-2019074393-A1 · Mar 7, 2019 · US
High-quality, single-crystalline silicon-germanium films
US-2019013200-A1 · Jan 10, 2019 · US
Laser device and methods for manufacturing the same
US-2018331504-A1 · Nov 15, 2018 · US
Method of growing germanium crystals
US-10125431-B2 · Nov 13, 2018 · US
Single crystal rhombohedral epitaxy of SiGe on sapphire at 450° C.-500° C. substrate temperatures
US-10096472-B2 · Oct 9, 2018 · US
Method of manufacturing a substrate with reduced threading dislocation density
US-2018277629-A1 · Sep 27, 2018 · US
Anisotropic deposition in nanoscale wires
US-10049871-B2 · Aug 14, 2018 · US
Devices and methods for electrochemical liquid phase epitaxy
US-2018195203-A1 · Jul 12, 2018 · US
A Nanowire Heterostructure
US-2018175371-A1 · Jun 21, 2018 · US
Film forming method and film forming apparatus
US-9966256-B2 · May 8, 2018 · US
Method for manufacturing a material having nanoelements
US-2018114650-A1 · Apr 26, 2018 · US
Method of gas-phase deposition by epitaxy
US-2018096844-A1 · Apr 5, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B29/08?
- CPC C30B29/08 is the Cooperative Patent Classification code for “Germanium.”
- How many patents are filed under CPC C30B29/08 (Germanium)?
- Our database includes 139 publications tagged with this CPC code.
- Is patent activity under CPC C30B29/08 growing?
- Publication counts under this code: 8 in 2024 vs 21 in 2025 (latest complete years).