Film forming method and film forming apparatus

Patent metadata

Field	Value
Publication number	US-9966256-B2
Application number	US-201514844193-A
Country	US
Kind code	B2
Filing date	Sep 3, 2015
Priority date	Sep 5, 2014
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece.

First claim

What is claimed is:

1. A method of forming a film comprising:
preparing a workpiece with a crystallized silicon film or a silicon-germanium film formed on a surface of the workpiece;
accommodating the workpiece into a processing chamber;
supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of a film to be formed on the crystallized silicon film or the silicon-germanium film is suppressed such that a lattice constant is changed on an entire surface of the crystallized silicon film or the silicon-germanium film; and
after supplying a crystallization suppressing process gas, supplying a source gas into the processing chamber to form an amorphous film on the crystallized silicon film or the silicon-germanium film,
wherein the crystallization suppressing process gas is selected from a group consisting of a phosphine-based gas, a borane-based gas, a hydrocarbon-based gas, and an organosilane-based gas.

2. The method of claim 1 , further comprising: removing an oxide film from a surface of the crystallized silicon film or the silicon-germanium film before supplying a crystallization suppressing process gas.

3. The method of claim 2 , wherein a hydrogen-containing gas is used in removing the oxide film.

4. The method of claim 1 , further comprising: crystallizing the amorphous film after supplying a source gas.

5. The method of claim 1 , wherein the film to be formed on the crystallized silicon film or the silicon-germanium film includes one of a silicon film, a germanium film and a silicon-germanium film.

6. The method of claim 1 , wherein the source gas includes one of silicon, germanium and silicon-germanium.

7. The method of claim 1 , wherein the amorphous film includes one of an amorphous silicon film, an amorphous germanium film and an amorphous silicon-germanium film.

8. A method of forming a film on a surface of a crystallized silicon film or a silicon-germanium film, the method comprising:
changing a lattice constant of the entire surface of the crystallized silicon film or the silicon-germanium film; and
after changing a lattice constant, forming an amorphous film on the surface of the crystallized silicon film or the silicon-germanium film,
wherein a phosphine-based gas, a borane-based gas, a hydrocarbon-based gas, or an organosilane-based gas is used in changing a lattice constant.

9. The method of claim 8 , further comprising: removing an oxide film from the surface of the crystallized silicon film or the silicon-germanium film before changing a lattice constant.

10. The method of claim 8 , further comprising: crystallizing the amorphous film.

11. The method of claim 8 , wherein the amorphous film includes one of an amorphous silicon film, an amorphous germanium film and an amorphous silicon-germanium film.

Assignees

• Tokyo Electron Ltd

Inventors

• Takagi Satoshi
• Takahashi Kazuya
• Murakami Hiroki
• Suzuki Daisuke

Classifications

• H10P14/3804

  using crystallisation-inhibiting elements · CPC title

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3454

  Amorphous · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3411 Primary

  Silicon, silicon germanium or germanium · CPC title