Anisotropic deposition in nanoscale wires

Patent metadata

Field	Value
Publication number	US-10049871-B2
Application number	US-201414766285-A
Country	US
Kind code	B2
Filing date	Feb 4, 2014
Priority date	Feb 6, 2013
Publication date	Aug 14, 2018
Grant date	Aug 14, 2018

Abstract

The present invention generally relates to nanoscale wires, including anisotropic deposition in nanoscale wires. In one set of embodiments, material may be deposited on certain portions of a nanoscale wire, e.g., anisotropically. For example, material may be deposited on a first facet of a crystalline nanoscale wire but not on a second facet. In some cases, additional materials may be deposited thereon, and/or the portions of the nanoscale wire may be removed, e.g., to produce vacant regions within the nanoscale wire, which may contain gas or other species. Other embodiments of the invention may be directed to articles made thereby, devices containing such nanoscale wires, kits involving such nanoscale wires, or the like.

First claim

What is claimed is:

1. A composition, comprising:
a crystalline nanoscale wire comprising a core and at least two separate shell regions surrounding portions of the core, wherein the core is faceted and comprises a facet selected from the group consisting of a {011} facet, a {111} facet and a {113} facet.

2. A composition, comprising:
a crystalline nanoscale wire comprising a core and at least two separate shell regions surrounding portions of the core, wherein the core is faceted, and wherein the at least two separate shell regions are each positioned substantially on a first facet but not a second facet of the core.

3. The composition of claim 1 , wherein the facet is a {011} facet, and at least one of the shell regions is positioned on the {011} facet of the nanoscale wire.

4. The composition of claim 1 , wherein the facet is a {111} facet, and at least one of the shell regions is positioned on the {111} facet of the nanoscale wire.

5. The composition of claim 1 , wherein the facet is a {113} facet, and at least one of the shell regions is positioned on the {113} facet of the nanoscale wire.

6. The composition of claim 2 , wherein the at least two separate shell regions are constructed and arranged to define one or more regions on the core of the crystalline nanoscale wire that contain a species.

7. A composition, comprising:
a crystalline nanoscale wire comprising a core and at least two separate shell regions surrounding portions of the core, wherein the composition of the core and the composition of at least one of the two separate shell regions are substantially identical.

8. The composition of claim 2 , wherein the crystalline nanoscale wire comprises a semiconductor.

9. The composition of claim 2 , wherein the core comprises Si.

10. The composition of claim 2 , wherein the core consists essentially of Si.

11. The composition of claim 2 , wherein at least one of the two separate shell regions comprises Si.

12. The composition of claim 2 , wherein at least one of the two separate shell regions consists essentially of Si.

13. The composition of claim 1 , wherein at least one of the two separate shell regions comprises Ge.

14. The composition of claim 1 , wherein at least one of the two separate shell regions consists essentially of Ge.

15. The composition of claim 2 , wherein the core has a diameter of less than about 1 micrometer.

16. The composition of claim 2 , wherein the core has a variation in average diameter of less than about 20%.

Assignees

• Harvard College
• Korea Univ

Inventors

• Lieber Charles M
• Kim Sun-Kyung
• Day Robert
• Park Hong-Gyu
• Kempa Thomas J

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2924

  Structures · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title