Method and apparatus for precleaning a substrate surface prior to epitaxial growth

Patent metadata

Field	Value
Publication number	US-10428441-B2
Application number	US-201715627149-A
Country	US
Kind code	B2
Filing date	Jun 19, 2017
Priority date	Aug 9, 2013
Publication date	Oct 1, 2019
Grant date	Oct 1, 2019

Abstract

Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

First claim

The invention claimed is:

1. A method, comprising: forming a contaminant free surface comprising a native oxide laver by performing a reducing process to remove carbon containing contaminants from a surface of a substrate in a first processing chamber; then transferring the substrate from the first processing chamber to a second processing chamber; then removing the native oxide layer from the substrate by performing an etch process on the substrate in the second processing chamber; and then forming an epitaxial layer on the surface of the substrate; wherein the reducing process comprises forming a hydrogen containing plasma in the first processing chamber.

2. A method, comprising:
removing carbon containing contaminants from a surface of a substrate by performing a reducing process on the substrate in a first processing chamber, wherein the carbon containing contaminants are a first portion of carbon containing contaminants;
performing an oxidizing process following the reducing process to remove a second portion of carbon containing contaminants; then
transferring the substrate from the first processing chamber to a second processing chamber; then
removing an oxide layer from the surface of the substrate by performing an etch process on the substrate in the second processing chamber; and then
forming an epitaxial layer on the surface of the substrate.

3. The method of claim 2 , wherein the oxidizing process is performed in the first processing chamber.

4. A method, comprising:
forming a contaminant free surface comprising a native oxide layer by exposing a surface of a substrate to an ammonia containing plasma to remove carbon containing contaminants from the surface of the substrate in a first processing chamber; then
transferring the substrate from the first processing chamber to a second processing chamber; then
removing the native oxide layer from the substrate by performing an etch process on the substrate in the second processing chamber; and then
forming an epitaxial layer on the surface of the substrate.

5. The method of claim 4 , wherein the ammonia containing plasma is an inductively coupled plasma.

6. The method of claim 4 , wherein the ammonia containing plasma is a capacitively coupled plasma.

7. A method, comprising:
removing carbon containing contaminants from a surface of a substrate by exposing the surface of the substrate to an ammonia containing plasma in a first processing chamber, wherein the carbon containing contaminants are a first portion of carbon containing contaminants;
performing an oxidizing process following the exposing the surface of the substrate to the ammonia containing plasma to remove a second portion of carbon containing contaminants; then
transferring the substrate from the first processing chamber to a second processing chamber: then
removing an oxide layer from the surface of the substrate by performing an etch process on the substrate in the second processing chamber; and then
forming an epitaxial layer on the surface of the substrate.

8. The method of claim 7 , wherein the oxidizing process is performed in the first processing chamber.

9. A method, comprising:
removing a first portion of carbon containing contaminants from a surface of a substrate by performing a reducing process on the substrate; then
removing a second portion of the carbon containing contaminants by performing an oxidizing process on the substrate, wherein the reducing process and the oxidizing process are performed in a first processing chamber; then
cleaning the surface of the substrate in a second processing chamber; and then
forming an epitaxial layer on the surface of the substrate.

10. The method of claim 9 , wherein the reducing process comprises forming a hydrogen containing plasma in the first processing chamber.

11. The method of claim 10 , wherein the hydrogen containing plasma is an inductively coupled plasma.

12. The method of claim 10 , wherein the hydrogen containing plasma is a capacitively coupled plasma.

13. The method of claim 1 , wherein the etch process comprises exposing the substrate to ammonia and HF.

14. The method of claim 13 , wherein the etch process further comprises exposing the substrate to a plasma.

Assignees

• Applied Materials Inc

Inventors

• Olsen Christopher S
• Guarini Theresa K
• Tobin Jeffrey
• Hawrylchak Lara
• Stone Peter
• Lo Chi Wei
• Chopra Saurabh

Classifications

• C30B29/08

  Germanium · CPC title

• C30B25/186 Primary

  being specially pre-treated by, e.g. chemical or physical means · CPC title

• C30B29/06

  Silicon · CPC title

• H01J49/105

  using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP] · CPC title

• H10P72/0408

  for drying · CPC title