Dislocation in SiC semiconductor substrate
US-9450054-B2 · Sep 20, 2016 · US
Epitaxial-layer growth
Epitaxial-layer growth · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B23/02 |
| Official title | Epitaxial-layer growth |
| Display label | Epitaxial-layer growth |
| Total patents | 527 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 42 |
| 2016 | 46 |
| 2017 | 31 |
| 2018 | 28 |
| 2019 | 39 |
| 2020 | 41 |
| 2021 | 60 |
| 2022 | 52 |
| 2023 | 50 |
| 2024 | 63 |
| 2025 | 63 |
| 2026 | 12 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Radical generator and molecular beam epitaxy apparatus
US-9447518-B2 · Sep 20, 2016 · US
Self-gettering differential pump
US-9416778-B2 · Aug 16, 2016 · US
Method for fabricating single-crystalline niobium oxynitride film and method for generating hydrogen using single-crystalline niobium oxynitride film
US-2016201218-A1 · Jul 14, 2016 · US
Method for forming oxide layer, laminated substrate for epitaxial growth, and method for producing the same
US-2016194750-A1 · Jul 7, 2016 · US
Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
US-9382641-B2 · Jul 5, 2016 · US
METHOD FOR MANUFACTURING SiC WAFER FIT FOR INTEGRATION WITH POWER DEVICE MANUFACTURING TECHNOLOGY
US-2016189956-A1 · Jun 30, 2016 · US
Silicon carbide single-crystal substrate and method of manufacturing the same
US-2016138186-A1 · May 19, 2016 · US
Epitaxial wafer and method of producing same
US-9340900-B2 · May 17, 2016 · US
III-Nitride Semiconductor Structure with Intermediate and Transition Layers
US-2016126315-A1 · May 5, 2016 · US
Radiation detector, scintillator panel, and method for manufacturing the same
US-2016116607-A1 · Apr 28, 2016 · US
Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
US-2016118165-A1 · Apr 28, 2016 · US
Vanadium doped SiC single crystals and method thereof
US-9322110-B2 · Apr 26, 2016 · US
Film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device
US-9309606-B2 · Apr 12, 2016 · US
Method for manufacturing sic wafer fit for integration with power device manufacturing technology
US-2016032486-A1 · Feb 4, 2016 · US
Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device
US-9252322-B2 · Feb 2, 2016 · US
Systems And Methods For Growing A Non-Phase Separated Group-III Nitride Semiconductor Alloy
US-2016009556-A1 · Jan 14, 2016 · US
Electrode active material layer, electrode body, lithium-ion secondary battery, and method of producing electrode active material layer
US-9231247-B2 · Jan 5, 2016 · US
Method for producing a semiconductor device, and semiconductor device
US-2015380238-A1 · Dec 31, 2015 · US
Methods for epitaxial silicon growth
US-9217209-B2 · Dec 22, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B23/02?
- CPC C30B23/02 is the Cooperative Patent Classification code for “Epitaxial-layer growth.”
- How many patents are filed under CPC C30B23/02 (Epitaxial-layer growth)?
- Our database includes 527 publications tagged with this CPC code.
- Is patent activity under CPC C30B23/02 growing?
- Publication counts under this code: 63 in 2024 vs 63 in 2025 (latest complete years).