Silicon carbide single-crystal substrate and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2016138186-A1
Application number	US-201414898527-A
Country	US
Kind code	A1
Filing date	May 14, 2014
Priority date	Jul 3, 2013
Publication date	May 19, 2016
Grant date	—

Abstract

A method of manufacturing a silicon carbide single-crystal substrate includes the following steps. A seed crystal having a main surface and being made of silicon carbide, and a silicon carbide source material are prepared. A silicon carbide single crystal is grown on the main surface by sublimating the silicon carbide source material while maintaining a temperature gradient between any two points in the silicon carbide source material at 30° C./cm or less. The main surface of the seed crystal is a {0001} plane or a plane having an off angle of 10° or less relative to the {0001} plane, and the main surface has a screw dislocation density of 20/cm 2 or more. Thus, a silicon carbide single-crystal substrate capable of achieving improved crystal quality and a method of manufacturing the same are provided.

First claim

1 . A method of manufacturing a silicon carbide single-crystal substrate, comprising the steps of:
preparing a seed crystal having a main surface and being made of silicon carbide, and a silicon carbide source material; and growing a silicon carbide single crystal on said main surface by sublimating said silicon carbide source material while maintaining a temperature gradient between any two points in said silicon carbide source material at 30° C./cm or less, said main surface of said seed crystal being a {0001} plane or a plane having an off angle of 10° or less relative to the {0001} plane, said main surface having a screw dislocation density of 20/cm 2 or more.

2 . The method of manufacturing a silicon carbide single-crystal substrate according to claim 1 , wherein
said main surface has a screw dislocation density of 100000/cm 2 or less.

3 . The method of manufacturing a silicon carbide single-crystal substrate according to claim 1 , wherein
in said step of growing a silicon carbide single crystal, a temperature gradient between a surface of said silicon carbide source material and a growth surface of said silicon carbide single crystal facing said surface of said silicon carbide source material is 5° C./cm or more.

4 . The method of manufacturing a silicon carbide single-crystal substrate according to claim 1 , wherein
said main surface of said seed crystal has a maximum dimension of 80 mm or more, and a cut surface of said silicon carbide single crystal sliced along a plane parallel to said main surface has a maximum dimension of 100 mm or more, and the maximum dimension of said cut surface of said silicon carbide single crystal is greater than the maximum dimension of said main surface of said seed crystal.

5 . A silicon carbide single-crystal substrate comprising a main surface,
said main surface having a maximum dimension of 100 mm or more, a {0001} plane orientation difference between any two points spaced apart from each other by 1 cm in said main surface being 35 seconds or less.

6 . The silicon carbide single-crystal substrate according to claim 5 , wherein
said main surface has a screw dislocation density of 20/cm 2 or more and 100000/cm 2 or less.

Assignees

• Sumitomo Electric Industries

Inventors

• Hori Tsutomu
• Kawase Tomohiro
• Sasaki Makoto

Classifications

• C30B23/025 Primary

  characterised by the substrate · CPC title

• C30B23/02

  Epitaxial-layer growth · CPC title

• C30B29/36

  Carbides · CPC title

• C30B23/00 Primary

  Single-crystal growth by condensing evaporated or sublimed materials · CPC title