Scintillators and applications thereof
US-9121952-B2 · Sep 1, 2015 · US
Radiation detector, scintillator panel, and method for manufacturing the same
US2016116607A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016116607-A1 |
| Application number | US-201614989242-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 6, 2016 |
| Priority date | Jul 16, 2013 |
| Publication date | Apr 28, 2016 |
| Grant date | — |
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Abstract
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According to the embodiment, a radiation detector includes a photoelectric conversion substrate converting light to an electrical signal and a scintillator layer being in contact with the photoelectric conversion substrate and converting externally incident radiation to light. The scintillator layer is made of a phosphor containing Tl as an activator in CsI, which is a halide. A concentration of the activator in the phosphor is 1.6 mass %±0.4 mass %, and a concentration distribution of the activator in an in-plane direction and a film thickness direction is within ±15%.
First claim
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What is claimed is: 1 . A radiation detector comprising: a photoelectric conversion substrate converting light to an electrical signal; and a scintillator layer being in contact with the photoelectric conversion substrate and converting externally incident radiation to light, the scintillator layer being made of a phosphor containing Tl as an activator in CsI, which is a halide, a concentration of the activator in the phosphor being 1.6 mass %±0.4 mass %, and a concentration distribution of the activator in an in-plane direction and a film thickness direction being within ±15%. 2 . The radiation detector according to claim 1 , wherein in the scintillator layer, the concentration distribution of the activator in the in-plane direction and the film thickness direction is ±15% or less in a region of a unit film thickness of 200 nm or less. 3 . The radiation detector according to claim 1 , wherein the scintillator layer has a columnar crystal structure. 4 . A method for manufacturing a radiation detector including a photoelectric conversion substrate converting light to an electrical signal and a scintillator layer being in contact with the photoelectric conversion substrate and converting externally incident radiation to light, the scintillator layer being made of a phosphor containing Tl as an activator in CsI, which is a halide, the method comprising: forming the scintillator layer by a vapor phase growth technique using a material source of CsI and Tl, a concentration of the activator in the phosphor being 1.6 mass %±0.4 mass % and a concentration distribution of the activator in an in-plane direction and a film thickness direction being within ±15%. 5 . A scintillator panel comprising: a support substrate transmissive to radiation; and a scintillator layer being in contact with the support substrate and converting externally incident radiation to light, the scintillator layer being made of a phosphor containing Tl as an activator in CsI, which is a halide, a concentration of the activator in the phosphor being 1.6 mass %±0.4 mass %, and a concentration distribution of the activator in an in-plane direction and a film thickness direction being within ±15%. 6 . The scintillator panel according to claim 5 , wherein in the scintillator layer, the concentration distribution of the activator in the in-plane direction and the film thickness direction is ±15% or less in a region of a unit film thickness of 200 nm or less. 7 . The scintillator panel according to claim 5 , wherein the scintillator layer has a columnar crystal structure. 8 . The scintillator panel according to claim 5 , wherein the support substrate is formed from a material composed primarily of a light element rather than a transition metal element. 9 . A method for manufacturing a scintillator panel including a support substrate transmissive to radiation and a scintillator layer being in contact with the support substrate and converting externally incident radiation to light, the scintillator layer being made of a phosphor containing Tl as an activator in CsI, which is a halide, the method comprising: forming the scintillator layer by a vapor phase growth technique using a material source of CsI and Tl, a concentration of the activator in the phosphor is 1.6 mass %±0.4 mass % and a concentration distribution of the activator in an in-plane direction and a film thickness direction being within ±15%.
Assignees
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Classifications
- C09K11/628Primary
with alkali or alkaline earth metals · CPC title
Epitaxial-layer growth · CPC title
Inorganic compounds or compositions · CPC title
Sputtering · CPC title
Scintillation-photodiode combinations · CPC title
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Frequently asked questions
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- What does patent US2016116607A1 cover?
- According to the embodiment, a radiation detector includes a photoelectric conversion substrate converting light to an electrical signal and a scintillator layer being in contact with the photoelectric conversion substrate and converting externally incident radiation to light. The scintillator layer is made of a phosphor containing Tl as an activator in CsI, which is a halide. A concentration o…
- Who is the assignee on this patent?
- Toshiba Kk, Toshiba Electron Tubes & Devic
- What technology area does this patent fall under?
- Primary CPC classification C09K11/628. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Apr 28 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).