Film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device

Patent metadata

Field	Value
Publication number	US-9309606-B2
Application number	US-201414253169-A
Country	US
Kind code	B2
Filing date	Apr 15, 2014
Priority date	Oct 28, 2011
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

In one embodiment of the present invention, a film forming method of epitaxially growing a semiconductor film having a wurtzite structure by sputtering on a substrate for epitaxial growth heated to a desired temperature by using a heater, comprises the following steps. First, the substrate is disposed on a substrate holder including the heater in such a way that the substrate is disposed away from the heater by a predetermined distance. Then, the epitaxial film of the semiconductor film having the wurtzite structure is formed on the substrate in the state where the substrate is disposed away from the heater by the predetermined distance.

First claim

The invention claimed is:

1. A film forming method of forming an epitaxial film of a semiconductor thin film of a wurtzite structure by sputtering on a substrate for epitaxial growth by using a vacuum processing apparatus including:
a vacuum chamber capable of vacuum pumping;
a substrate holder for supporting the substrate for epitaxial growth; and
a heater capable of heating the substrate for epitaxial growth held by the substrate holder to a desired temperature,
wherein the epitaxial film of the semiconductor thin film of the wurtzite structure is formed on the substrate for epitaxial growth in a state where the substrate for epitaxial growth held by the substrate holder is held away from a substrate facing surface of the heater by 0.5-5 mm, and the epitaxial film having +c polarity,
wherein the substrate holder holds the substrate for epitaxial growth in a state where the substrate holder is in contact with a surface of the substrate for epitaxial growth on a lower side in a direction of gravity.

2. The film forming method according to claim 1 , comprising:
transporting the substrate for epitaxial growth and causing the substrate holder to hold the substrate for epitaxial growth in such a way that the substrate for epitaxial growth is held away from the substrate facing surface of the heater by 0.5-5 mm;
heating the substrate for epitaxial growth held by the substrate holder to the desired temperature by the heater; and
forming the epitaxial film of the semiconductor thin film of the wurtzite structure on the heated substrate for epitaxial growth.

3. A semiconductor light emitting element manufacturing method, comprising the film forming method according to claim 1 .

4. A semiconductor light emitting element, comprising the epitaxial film of the semiconductor thin film of the wurtzite structure fabricated by the film forming method according to claim 1 .

5. An illuminating device, comprising the semiconductor light emitting element according to claim 4 .

6. A vacuum processing apparatus comprising:
a vacuum chamber capable of vacuum pumping:
a substrate holder for supporting a substrate for epitaxial growth;
a heater capable of heating the substrate for epitaxial growth held by the substrate holder to a desired temperature; and
a target electrode which is provided inside the vacuum chamber and to which a target is attachable,
wherein the substrate holder is provided inside the vacuum chamber below the target electrode in a direction of gravity,
wherein the substrate holder holds the substrate for epitaxial growth away from a substrate facing surface of the heater by 0.5-5 mm to thereby form an epitaxial film of a semiconductor thin film of a wurtzite structure by sputtering on the substrate for epitaxial growth heated to a desired temperature by using the heater,
wherein the epitaxial film has a +c polarity,
wherein the substrate holder includes a substrate supporting portion and a mounting portion, the substrate supporting portion configured to support an outer edge portion of the substrate for epitaxial growth from below in the direction of gravity during film formation, the mounting portion formed integrally with the substrate supporting portion and disposed in contact with the heater, and
wherein, in the state where the mounting portion is disposed in contact with the heater, the substrate supporting portion is disposed away from the substrate facing surface of the heater by 0.4-5 mm.

7. The vacuum processing apparatus according to claim 6 , wherein the substrate supporting portion is a ring-shaped insulating member configured to support the outer edge portion of the substrate for epitaxial growth.

8. The vacuum processing apparatus according to claim 7 , further comprising a ring-shaped conductive member for supporting an outer peripheral portion of the ring-shaped insulating member,
wherein radio frequency power is applied to the ring-shaped conductive member.

Assignees

• Canon Anelva Corp

Inventors

• Daigo Yoshiaki

Classifications

• H10P14/3426

  Oxides · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title