Spincoating epitaxial films
US-2020347512-A1 · Nov 5, 2020 · US
Heating of the reaction chamber or the substrate
Heating of the reaction chamber or the substrate · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B19/08 |
| Official title | Heating of the reaction chamber or the substrate |
| Display label | Heating of the reaction chamber or the substrate |
| Total patents | 77 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 5 |
| 2016 | 12 |
| 2017 | 21 |
| 2018 | 8 |
| 2019 | 6 |
| 2020 | 9 |
| 2021 | 4 |
| 2022 | 3 |
| 2023 | 3 |
| 2024 | 2 |
| 2025 | 3 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Composition for preparing silicon carbide ingot and method for preparing silicon carbide ingot using the same
US-10822720-B1 · Nov 3, 2020 · US
Systems and methods for additive manufacturing and repair of metal components
US-2020269322-A1 · Aug 27, 2020 · US
Film formation apparatus and method of manufacturing semiconductor device
US-2020240038-A1 · Jul 30, 2020 · US
Film formation apparatus and film formation method
US-2020181795-A1 · Jun 11, 2020 · US
Systems and methods for additive manufacturing and repair of metal components
US-10639721-B2 · May 5, 2020 · US
Synthesis and processing of novel phase of carbon (Q-carbon)
US-10586702-B2 · Mar 10, 2020 · US
Synthesis and processing of novel phase of boron nitride (Q-BN)
US-10529564-B2 · Jan 7, 2020 · US
Alumina substrate
US-10458041-B2 · Oct 29, 2019 · US
SiC single crystal and method for producing same
US-10450671-B2 · Oct 22, 2019 · US
Method of producing crystal
US-10443149-B2 · Oct 15, 2019 · US
Alumina substrate
US-10294585-B2 · May 21, 2019 · US
Synthesis and processing of pure and NV nanodiamonds and other nanostructures
US-10211049-B2 · Feb 19, 2019 · US
Conversion of carbon into n-type and p-type doped diamond and structures
US-10196754-B2 · Feb 5, 2019 · US
Method for manufacturing a silicon carbide wafer using a susceptor having draining openings
US-10153207-B2 · Dec 11, 2018 · US
Method for producing SiC single crystal
US-10119199-B2 · Nov 6, 2018 · US
Sic single crystal production method and production apparatus
US-2018312996-A1 · Nov 1, 2018 · US
Metal Oxide Mesocrystal, and Method for Producing Same
US-2018147566-A1 · May 31, 2018 · US
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
US-2018112328-A1 · Apr 26, 2018 · US
Heat exchangers in sapphire processing
US-9945613-B2 · Apr 17, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B19/08?
- CPC C30B19/08 is the Cooperative Patent Classification code for “Heating of the reaction chamber or the substrate.”
- How many patents are filed under CPC C30B19/08 (Heating of the reaction chamber or the substrate)?
- Our database includes 77 publications tagged with this CPC code.
- Is patent activity under CPC C30B19/08 growing?
- Publication counts under this code: 2 in 2024 vs 3 in 2025 (latest complete years).