Alumina substrate

Patent metadata

Field	Value
Publication number	US-10458041-B2
Application number	US-201615554109-A
Country	US
Kind code	B2
Filing date	Mar 2, 2016
Priority date	Mar 23, 2015
Publication date	Oct 29, 2019
Grant date	Oct 29, 2019

Abstract

An alumina substrate on which an AlN layer is formed and that causes less warping, and a substrate material strong enough to withstand normal handling when an AlN crystal is grown upon it, and prevents cracking and fracturing of a grown crystal when stress is applied during growing or cooling. The substrate has a gap and a rare earth element-containing region inside the AlN layer or at the interface between the AlN layer and the alumina substrate. Warping of the AlN layer can be reduced by lattice-mismatch stress being concentrated at the region and releasing of stress by the gap. The region having a concentrating of stress, and the gap having a low mechanical strength, can induce crackings and fracturings. As a result, contamination of crackings and fracturings into the crystal grown on the substrate can be prevented. The region can ensure a level of mechanical strength sufficient for handling.

First claim

What is claimed is:

1. An alumina substrate comprising:
an alumina substrate base;
an AlN layer formed on a surface of the alumina substrate base, and
a plurality of spaced rare earth element-containing regions and a plurality of spaced gaps in an interior of the AlN layer or at an interface between the AlN layer and the alumina substrate base;
wherein the plurality of spaced rare earth element-containing regions are spaced from each other in a direction of the interface between the AlN layer and the alumina substrate base and dispersed among the plurality of spaced gaps.

2. The alumina substrate according to claim 1 , wherein a content of the rare earth element is 1˜10000 ppm based on Al element ratio.

3. The alumina substrate according to claim 2 , wherein a thickness of the AlN layer is 0.02 μm to 100 μm.

4. The alumina substrate according to claim 3 , wherein the alumina substrate is sapphire.

5. The alumina substrate according to claim 4 , wherein the AlN layer is mainly composed of a single crystal.

6. The alumina substrate according to claim 2 , wherein the alumina substrate is sapphire.

7. The alumina substrate according to claim 6 , wherein the AlN layer is mainly composed of a single crystal.

8. The alumina substrate according to claim 1 , wherein a thickness of the AlN layer is 0.02 μm to 100 μm.

9. The alumina substrate according to claim 8 , wherein the alumina substrate is sapphire.

10. The alumina substrate according to claim 9 , wherein the AlN layer is mainly composed of a single crystal.

11. The alumina substrate according to claim 1 , wherein the alumina substrate is sapphire.

12. The alumina substrate according to claim 11 , wherein the AlN layer is mainly composed of a single crystal.

13. The alumina substrate according to claim 1 , wherein the alumina substrate is formed by:
coating a raw material containing a rare earth element on the alumina substrate base;
drying the alumina substrate base coated with the raw material containing the rare earth element;
heat treating the alumina substrate base coated with the raw material containing the rare earth element at a temperature between 500° C. to 1400° C.; and
nitride treating the alumina substrate base coated with the raw material containing the rare earth element at a temperature between 1400° C. and 1800° C. to form the AlN layer.

14. The alumina substrate according to claim 1 , wherein, when viewed in two dimensions from above, the length of the rare earth element-containing regions is between 10%-100% of the length of the alumina substrate base in the same direction.

15. The alumina substrate according to claim 1 , wherein, when viewed in two dimensions from above, the length of the gaps is between 10%-60% of the length of the alumina substrate base in the same direction.

16. The alumina substrate according to claim 1 , wherein, when viewed in two dimensions from above, the lengths of the rare earth element-containing regions and the gaps are between 50%-100% of the length of the alumina substrate base in the same direction.

17. The alumina substrate according to claim 1 , wherein, when viewed in two dimensions from the side, the thickness of the rare earth element-containing regions and the gaps is less than 50% of the thickness of the AlN layer.

18. The alumina substrate according to claim 1 , wherein the plurality of spaced rare earth element-containing regions and the plurality of spaced gaps are closer to the interface between the AlN layer and the alumina substrate base than to a surface of the AlN layer opposite to the interface between the AlN layer and the alumina substrate base.

Assignees

• Tdk Corp

Inventors

• Yamasawa Kazuhito
• Ohido Atsushi
• Kawasaki Katsumi

Classifications

• H10P14/265

  using solutions · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3248

  consisting of two layers · CPC title

• H10P14/3246

  Monolayers · CPC title

• H10P14/3241

  being conductive materials · CPC title