Method of producing a nitride semiconductor crystal with precursor containing carbon and oxygen, and nitride semiconductor crystal and semiconductor device made by the method
US-9219123-B2 · Dec 22, 2015 · US
Alumina substrate
US10294585B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10294585-B2 |
| Application number | US-201515329478-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 6, 2015 |
| Priority date | Aug 12, 2014 |
| Publication date | May 21, 2019 |
| Grant date | May 21, 2019 |
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Abstract
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An alumina substrate wherein an AlN layer is formed on a surface of the alumina substrate and a rare earth elements-containing layer and/or rare earth elements-containing regions is/are formed in the interior of the AlN layer or in the interface between the AlN layer and the alumina substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. An alumina substrate wherein an AlN layer is formed on a surface of the alumina substrate and a rare earth elements-containing layer and/or rare earth elements-containing regions is/are formed in the interior of the AlN layer and in an area closer to the surface of the alumina substrate than to an outer surface of the AlN layer, or in the interface between the AlN layer and the alumina substrate. 2. The alumina substrate of claim 1 , wherein, the content of the rare earth elements is 1˜10000 ppm in the ratio relative to Al element. 3. The alumina substrate of claim 1 , wherein, the thickness of the AlN layer is 0.02 μm to 100 μm. 4. The alumina substrate of claim 1 , wherein, the alumina substrate is sapphire. 5. The alumina substrate of claim 4 , wherein, the AlN layer is mainly composed of single crystals. 6. The alumina substrate of claim 2 , wherein, the thickness of the AlN layer is 0.02 μm to 100 μm. 7. The alumina substrate of claim 2 , wherein, the alumina substrate is sapphire. 8. The alumina substrate of claim 3 , wherein, the alumina substrate is sapphire. 9. The alumina substrate of claim 6 , wherein, the alumina substrate is sapphire. 10. The alumina substrate of claim 7 , wherein, the AlN layer is mainly composed of single crystals. 11. The alumina substrate of claim 8 , wherein, the AlN layer is mainly composed of single crystals. 12. The alumina substrate of claim 9 , wherein, the AlN layer is mainly composed of single crystals.
Assignees
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Classifications
Microstructure · CPC title
Nitrides · CPC title
consisting of two layers · CPC title
Monolayers · CPC title
being conductive materials · CPC title
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Frequently asked questions
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- What does patent US10294585B2 cover?
- An alumina substrate wherein an AlN layer is formed on a surface of the alumina substrate and a rare earth elements-containing layer and/or rare earth elements-containing regions is/are formed in the interior of the AlN layer or in the interface between the AlN layer and the alumina substrate.
- Who is the assignee on this patent?
- Tdk Corp
- What technology area does this patent fall under?
- Primary CPC classification C30B29/403. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue May 21 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).