Evaluation method for bulk silicon carbide single crystals and reference silicon carbide single crystal used in said method
US-2017199092-A1 · Jul 13, 2017 · US
Composition for preparing silicon carbide ingot and method for preparing silicon carbide ingot using the same
US10822720B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-10822720-B1 |
| Application number | US-202016887263-A |
| Country | US |
| Kind code | B1 |
| Filing date | May 29, 2020 |
| Priority date | Jul 11, 2019 |
| Publication date | Nov 3, 2020 |
| Grant date | Nov 3, 2020 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method for preparing a SiC ingot includes loading a composition of a raw material comprising a carbon source and a silicon source into a reactor; placing a plurality of seed crystal on one side of the reactor spaced apart from the composition; and sublimating the composition such that the SiC ingot grows from the plurality of seed crystal. A flow factor of the composition may be 5 to 35.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for preparing a SiC ingot, comprising: loading a powder composition of a raw material comprising SiC particles into a reactor; placing a seed crystal on one side of the reactor spaced apart from the powder composition; and sublimating the powder composition such that the SiC ingot grows from the seed crystal, wherein a flow factor of the composition is 5 to 35, wherein when the powder composition is compressed by applying a pressure of 8 kPa, a ratio of a change in an internal friction angle after the compression to an internal friction angle before the compression is 5% to 18%, and wherein a number of a surface pit of the SiC ingot is 10 K/cm 2 or less. 2. The method of claim 1 , wherein a D 50 of the powder composition is 10 μm to 800 μm. 3. The method of claim 1 , wherein a caliber of the SiC ingot is 4 inches or more. 4. The method of claim 1 , wherein a caliber of the SiC ingot is 6 inches or more. 5. The method of claim 1 , wherein the SiC ingot comprises a 4H SiC single crystal. 6. The method of claim 1 , wherein the SiC ingot is convex or flat. 7. A powder composition of a raw material for preparing a SiC ingot with a surface pit of 10 K/cm 2 or less, wherein the composition generates a flow when a predetermined pressure is applied, wherein the powder composition comprises SiC particles, wherein the powder composition has a flow factor of 5 to 35, and wherein when the powder composition is compressed by applying a pressure of 8 kPa, a ratio of a change in an internal friction angle after the compression to an internal friction angle before the compression is 5% to 18%.
Assignees
Inventors
Classifications
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10822720B1 cover?
- A method for preparing a SiC ingot includes loading a composition of a raw material comprising a carbon source and a silicon source into a reactor; placing a plurality of seed crystal on one side of the reactor spaced apart from the composition; and sublimating the composition such that the SiC ingot grows from the plurality of seed crystal. A flow factor of the composition may be 5 to 35.
- Who is the assignee on this patent?
- Skc Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B29/36. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 03 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).