METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SINGLE CRYSTAL AlN PRODUCTION APPARATUS
US-2025034751-A1 · Jan 30, 2025 · US
Liquid-phase epitaxial-layer growth
Liquid-phase epitaxial-layer growth · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B19/00 |
| Official title | Liquid-phase epitaxial-layer growth |
| Display label | Liquid-phase epitaxial-layer growth |
| Total patents | 51 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 5 |
| 2016 | 13 |
| 2017 | 11 |
| 2018 | 4 |
| 2019 | 4 |
| 2020 | 4 |
| 2021 | 1 |
| 2022 | 1 |
| 2023 | 1 |
| 2024 | 6 |
| 2025 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Q-switch structure and method of producing q-switch structure
US-2024250494-A1 · Jul 25, 2024 · US
Single-crystal diamond and method of manufacturing the same
US-2024229295-A1 · Jul 11, 2024 · US
Single-crystal diamond and method of manufacturing the same
US-2024183068-A1 · Jun 6, 2024 · US
Single-crystal diamond and method of manufacturing the same
US-2024175167-A1 · May 30, 2024 · US
Amino acid derivative-containing organic molecules for improved optical properties in ar/vr components
US-2024150933-A1 · May 9, 2024 · US
Chiral organic optoelectronic molecules with tunable refractive index for improved control of circularly polarized light propagation in optical devices
US-2024150935-A1 · May 9, 2024 · US
Silicon wafer and epitaxial silicon wafer
US-2023369416-A1 · Nov 16, 2023 · US
Film formation apparatus configured to supply mist of a solution to surface of a substrate and method of manufacturing semiconductor device using the film formation apparatus
US-11270882-B2 · Mar 8, 2022 · US
Method for making epitaxial structure
US-11078597-B2 · Aug 3, 2021 · US
Film formation apparatus and method of manufacturing semiconductor device
US-2020243333-A1 · Jul 30, 2020 · US
Method for producing Group III nitride semiconductor, seed substrate and Group III nitride semiconductor crystal
US-10693032-B2 · Jun 23, 2020 · US
Solution deposition method for forming metal oxide or metal hydroxide layer
US-10689775-B2 · Jun 23, 2020 · US
Multilayer iron nitride hard magnetic materials
US-10573439-B2 · Feb 25, 2020 · US
Faraday rotator, optical isolator, and method of manufacturing faraday rotator
US-2019309440-A1 · Oct 10, 2019 · US
Methods and mask structures for substantially defect-free epitaxial growth
US-10340139-B2 · Jul 2, 2019 · US
Synthesis and processing of pure and NV nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications
US-10240251-B2 · Mar 26, 2019 · US
Solution deposition method for forming metal oxide or metal hydroxide layer
US-2019048488-A1 · Feb 14, 2019 · US
Solution deposition method for forming metal oxide or metal hydroxide layer
US-10106909-B2 · Oct 23, 2018 · US
Magnetic material including α″-Fe16(NxZ1-x)2 or a mixture of α″-Fe16Z2 and α″-Fe16N2, where Z includes at least one of C, B, or O
US-10072356-B2 · Sep 11, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B19/00?
- CPC C30B19/00 is the Cooperative Patent Classification code for “Liquid-phase epitaxial-layer growth.”
- How many patents are filed under CPC C30B19/00 (Liquid-phase epitaxial-layer growth)?
- Our database includes 51 publications tagged with this CPC code.
- Is patent activity under CPC C30B19/00 growing?
- Publication counts under this code: 6 in 2024 vs 1 in 2025 (latest complete years).