WGM-based molecular sensors
US-9482608-B1 · Nov 1, 2016 · US
Q-switch structure and method of producing q-switch structure
US2024250494A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2024250494-A1 |
| Application number | US-202218563971-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 26, 2022 |
| Priority date | May 28, 2021 |
| Publication date | Jul 25, 2024 |
| Grant date | — |
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Abstract
Official abstract text for this publication.
A Q-switch structure including, a solid-state laser medium, and a magneto-optical material, wherein the solid-state laser medium and the magneto-optical material are joined and integrated. In addition, the solid-state laser medium has a thickness of 1 mm or more, and the solid-state medium and the magneto-optical material are directly joined. Consequently, the Q-switch is applicable to high optical output and contributes to the miniaturization of a laser apparatus.
First claim
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1 - 10 . (canceled) 11 . A Q-switch structure comprising: a solid-state laser medium; and a magneto-optical material, wherein the solid-state laser medium and the magneto-optical material are joined and integrated; the solid-state laser medium has a thickness of 1 mm or more; and the solid-state medium and the magneto-optical material are directly joined. 12 . The Q-switch structure according to claim 11 , wherein the magneto-optical material is formed by crystal growth on the solid-state laser medium by using the solid-state laser medium as a substrate thereby joining and integrating with the solid-state laser medium. 13 . The Q-switch structure according to claim 11 , wherein the magneto-optical material is a bismuth-substituted rare earth iron garnet. 14 . The Q-switch structure according to claim 12 , wherein the magneto-optical material is a bismuth-substituted rare earth iron garnet. 15 . The Q-switch structure according to claim 11 , wherein the solid-state laser medium is selected from any one of ceramics selected from the group comprised of Y 3 Al 5 O 12 , Gd 3 Ga 5 O 12 , and (GdCa) 3 (GaMgZr) 5 O 12 doped with anyone selected from the group comprised of Nd, Yb, and Cr. 16 . The Q-switch structure according to claim 12 , wherein the solid-state laser medium is selected from any one of ceramics selected from the group comprised of Y 3 Al 5 O 12 , Gd 3 Ga 5 O 12 , and (GdCa) 3 (GaMgZr) 5 O 12 doped with anyone selected from the group comprised of Nd, Yb, and Cr. 17 . The Q-switch structure according to claim 13 , wherein the solid-state laser medium is selected from any one of ceramics selected from the group comprised of Y 3 Al 5 O 12 , Gd 3 Ga 5 O 12 , and (GdCa) 3 (GaMgZr) 5 O 12 doped with anyone selected from the group comprised of Nd, Yb, and Cr. 18 . The Q-switch structure according to claim 14 , wherein the solid-state laser medium is selected from any one of ceramics selected from the group comprised of Y 3 Al 5 O 12 , Gd 3 Ga 5 O 12 , and (GdCa) 3 (GaMgZr) 5 O 12 doped with anyone selected from the group comprised of Nd, Yb, and Cr. 19 . A Q-switch solid-state laser apparatus comprising: the Q-switch structure according to claim 11 and a magnetic flux generator being arranged between a pair of resonant mirrors. 20 . A Q-switch solid-state laser apparatus comprising: the Q-switch structure according to claim 12 and a magnetic flux generator being arranged between a pair of resonant mirrors. 21 . A method of producing a Q-switch structure comprising a solid-state laser medium and a magneto-optical material in which the solid-state laser medium and the magneto-optical material are joined and integrated, the method comprising the steps of: preparing the solid-state laser medium having a thickness of 1 mm or more; and forming the magneto-optical material by crystal growth on the solid-state laser medium by using the solid-state laser medium as a substrate; and thereby producing the Q-switch structure in which the solid-state laser medium and the magneto-optical material are directly joined and integrated. 22 . The method of producing the Q-switch structure according to claim 21 , wherein a method for the crystal growth is a liquid phase epitaxial growth method. 23 . The method of producing the Q-switch structure according to claim 21 , wherein the magneto-optical material is a bismuth-substituted rare earth iron garnet. 24 . The method of producing the Q-switch structure according to claim 22 , wherein the magneto-optical material is a bismuth-substituted rare earth iron garnet. 25 . The method of producing the Q-switch structure according to claim 21 , wherein the solid-state laser medium is selected from any one of ceramics selected from the group comprised of Y 3 Al 5 O 12 , Gd 3 Ga 5 O 12 , and (GdCa) 3 (GaMgZr) 5 O 12 doped with anyone selected from a group comprised of Nd, Yb, and Cr. 26 . The method of producing the Q-switch structure according to claim 22 , wherein the solid-state laser medium is selected from any one of ceramics selected from the group comprised of Y 3 Al 5 O 12 , Gd 3 Ga 5 O 12 , and (GdCa) 3 (GaMgZr) 5 O 12 doped with anyone selected from a group comprised of Nd, Yb, and Cr. 27 . The method of producing the Q-switch structure according to claim 23 , wherein the solid-state laser medium is selected from any one of ceramics selected from the group comprised of Y 3 Al 5 O 12 , Gd 3 Ga 5 O 12 , and (GdCa) 3 (GaMgZr) 5 O 12 doped with anyone selected from a group comprised of Nd, Yb, and Cr. 28 . The method of producing the Q-switch structure according to claim 24 , wherein the solid-state laser medium is selected from any one of ceramics selected from the group comprised of Y 3 Al 5 O 12 , Gd 3 Ga 5 O 12 , and (GdCa) 3 (GaMgZr) 5 O 12 doped with anyone selected from a group comprised of Nd, Yb, and Cr. 29 . A method of producing a Q-switch solid-state laser apparatus comprising: producing the Q-switch structure by the method of producing a Q-switch structure according to claim 21 ; and producing the Q-switch solid-state laser apparatus by arranging the Q-switch structure and a magnetic flux generator between a pair of resonant mirrors. 30 . A method of producing a Q-switch solid-state laser apparatus comprising: producing the Q-switch structure by the method of producing a Q-switch structure according to claim 22 ; and producing the Q-switch solid-state laser apparatus by arranging the Q-switch structure and a magnetic flux generator between a pair of resonant mirrors.
Assignees
Inventors
Classifications
- H01S3/0627Primary
the resonator being monolithic, e.g. microlaser · CPC title
garnet · CPC title
in the form of a plate or disc · CPC title
based on magneto-optical elements, e.g. exhibiting Faraday effect · CPC title
neodymium · CPC title
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- What does patent US2024250494A1 cover?
- A Q-switch structure including, a solid-state laser medium, and a magneto-optical material, wherein the solid-state laser medium and the magneto-optical material are joined and integrated. In addition, the solid-state laser medium has a thickness of 1 mm or more, and the solid-state medium and the magneto-optical material are directly joined. Consequently, the Q-switch is applicable to high opt…
- Who is the assignee on this patent?
- Shinetsu Chemical Co, National Univ Corporation Toyohashi Univ Of Technology
- What technology area does this patent fall under?
- Primary CPC classification H01S3/0627. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jul 25 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).