Film formation apparatus configured to supply mist of a solution to surface of a substrate and method of manufacturing semiconductor device using the film formation apparatus

Patent metadata

Field	Value
Publication number	US-11270882-B2
Application number	US-202016741060-A
Country	US
Kind code	B2
Filing date	Jan 13, 2020
Priority date	Jan 25, 2019
Publication date	Mar 8, 2022
Grant date	Mar 8, 2022

Abstract

A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store the solution; a heater configured to heat the solution in the reservoir; an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and a mist supply path configured to carry the mist from the reservoir to the furnace.

First claim

What is claimed is:

1. A film formation apparatus configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate, the film formation apparatus comprising:
a furnace configured to house and heat the substrate;
a reservoir configured to store the solution;
a heater configured to heat the solution in the reservoir;
an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and
a mist supply path configured to carry the mist from the reservoir to the furnace,
wherein during epitaxially growing the film, the solution in the reservoir is controlled to have a higher temperature than a portion of an inner surface of an outer wall of the reservoir, the portion of the inner surface being located above a surface of the solution in the reservoir.

2. A film formation apparatus configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate, the film formation apparatus comprising:
a furnace configured to house and heat the substrate;
a reservoir configured to store the solution;
a heater configured to heat the solution in the reservoir;
an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir;
a mist supply path configured to carry the mist from the reservoir to the furnace; and
a carrier gas supply path configured to supply carrier gas to the reservoir,
wherein, during epitaxially growing the film, the solution in the reservoir is controlled to have a higher temperature than the carrier gas in the reservoir.

3. The film formation apparatus of claim 2 , wherein the heater is located below a surface of the solution in the reservoir.

4. The film formation apparatus of claim 2 , wherein a temperature of the solution in the reservoir is increased or decreased during epitaxially growing the film.

5. The film formation apparatus of claim 1 , wherein the heater is located below a surface of the solution in the reservoir.

6. The film formation apparatus of claim 1 , wherein a temperature of the solution in the reservoir is increased or decreased during epitaxially growing the film.

7. A method of manufacturing a semiconductor device using a film formation apparatus which comprises:
a furnace configured to house and heat a substrate;
a reservoir configured to store a solution;
a heater configured to heat the solution in the reservoir;
an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate mist of the solution in the reservoir; and
a mist supply path configured to carry the mist from the reservoir to the furnace,
the method comprising:
heating the solution in the reservoir by the heater while applying the ultrasound to the solution in the reservoir by the ultrasonic transducer so as to generate the mist in the reservoir and supply the mist generated in the reservoir to a surface of the substrate housed in the furnace such that a film is epitaxially grown on the surface of the substrate.

8. A method of claim 7 , wherein during epitaxially growing the film, the solution in the reservoir is controlled to have a higher temperature than a portion of an inner surface of an outer wall of the reservoir, the portion of the inner surface being located above a surface of the solution in the reservoir.

9. The method of claim 7 , wherein the film formation apparatus further comprises a carrier gas supply path configured to supply carrier gas to the reservoir, and
during epitaxially growing the film, the solution in the reservoir is controlled to have a higher temperature than the carrier gas in the reservoir.

Assignees

• Nagaoka Tatsuji
• Nishinaka Hiroyuki
• Tahara Daisuke
• Yoshimoto Masahiro
• Denso Corp
• Nat Univ Corp Kyoto Inst Technology

Inventors

• Nagaoka Tatsuji
• Nishinaka Hiroyuki
• Tahara Daisuke
• Yoshimoto Masahiro

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/265 Primary

  using solutions · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/2918

  being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title

• B05B17/0653

  Details · CPC title