Method for making epitaxial structure

Patent metadata

Field	Value
Publication number	US-11078597-B2
Application number	US-201715434034-A
Country	US
Kind code	B2
Filing date	Feb 15, 2017
Priority date	Mar 28, 2012
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. A buffer layer is formed on the epitaxial growth surface. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are separated to form a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface.

First claim

What is claimed is:

1. A method for making epitaxial structure, the method comprising:
placing a carbon nanotube layer on a first epitaxial growth surface of a substrate, wherein the carbon nanotube layer comprises a plurality of carbon nanotubes, the carbon nanotube layer defines a plurality of apertures, a portion of the first epitaxial growth surface is exposed from the plurality of apertures;
epitaxially growing a buffer layer on the portion of the first epitaxial growth surface exposed from the plurality of apertures, wherein the buffer layer comprises a first surface in contact with the first epitaxial growth surface and a second surface opposite to the first surface;
growing a first epitaxial layer on the second surface of the buffer layer, wherein a plurality of first grooves is formed in the first epitaxial layer, and the plurality of carbon nanotubes is embedded in the plurality of first grooves;
exposing the first surface of the buffer layer by removing the substrate, wherein the buffer layer is kept on the first epitaxial layer after removing the substrate; and
growing a second epitaxial layer on the first surface of the buffer layer, wherein the second epitaxial layer is grown from the first surface of the buffer layer, and the buffer layer is sandwiched between the second epitaxial layer and the first epitaxial layer after growing the second epitaxial layer.

2. The method of claim 1 , wherein the growing the buffer layer comprises forming a plurality of second grooves on the buffer layer.

3. The method of claim 2 , wherein the growing the buffer layer further comprises embedding the carbon nanotube layer in the plurality of second grooves and exposing the carbon nanotube layer out of the buffer layer from the plurality of second grooves.

4. The method of claim 1 , wherein the first epitaxial growth surface comprises an exposed part, the exposed part is exposed from the plurality of apertures, and the buffer layer is grown on the exposed part and through the plurality of apertures.

5. The method of claim 4 , wherein sizes of the plurality of apertures are in a range from about 10 nanometers to about 500 micrometers.

6. The method of claim 4 , wherein a duty factor of the carbon nanotube layer is in a range from about 1:4 to about 4:1.

7. The method of claim 1 , wherein the plurality of carbon nanotubes extends along a direction substantially parallel to the first epitaxial growth surface.

8. The method of claim 1 , wherein the plurality of carbon nanotubes extends along a crystallographic orientation of the substrate.

9. The method of claim 1 , wherein the substrate and the buffer layer are separated by laser irradiation, corrosion, or thermal expansion and contraction.

10. The method of claim 1 , wherein the carbon nanotube layer is free-standing and placed on the first epitaxial growth surface directly.

11. The method of claim 1 , wherein the carbon nanotube layer is kept on the first epitaxial layer after removing the substrate and sandwiched between the second epitaxial layer and the first epitaxial layer after growing the second epitaxial layer.

12. The method of claim 1 , wherein the carbon nanotube layer is treated with an organic solvent after being placed on the first epitaxial growth surface so that the carbon nanotube layer is attached on the first epitaxial growth surface.

13. The method of claim 12 , wherein the organic solvent is applied to an entire surface of the carbon nanotube layer.

14. The method of claim 12 , wherein entirety of the carbon nanotube layer is immersed in the organic solvent.

15. The method of claim 12 , wherein the organic solvent is selected from the group consisting of ethanol, methanol, acetone, dichloroethane, chloroform, and mixtures thereof.

16. The method of claim 1 , wherein the plurality of carbon nanotubes are embedded in the first epitaxial layer when growing the first epitaxial layer on the second surface of the buffer layer.

17. The method of claim 1 , wherein the plurality of carbon nanotubes are embedded in the first epitaxial layer when growing the first epitaxial layer on the second surface of the buffer layer.

18. A method for making epitaxial structure, the method comprising:
placing a carbon nanotube layer on a first epitaxial growth surface of a substrate, wherein the carbon nanotube layer comprises a plurality of carbon nanotubes, the carbon nanotube layer defines a plurality of apertures, a portion of the first epitaxial growth surface is exposed from the plurality of apertures;
epitaxially growing a buffer layer on the portion of the first epitaxial growth surface exposed from the plurality of apertures, wherein the buffer layer comprises a first surface in contact with the first epitaxial growth surface and a second surface opposite to the first surface;
growing a first epitaxial layer on the second surface of the buffer layer, wherein a plurality of first grooves is formed in the first epitaxial layer, and the plurality of carbon nanotubes is embedded in the plurality of first grooves;
exposing the first surface of the buffer layer by removing the substrate, wherein the buffer layer is kept on the first epitaxial layer after removing the substrate; and
growing a second epitaxial layer on the first surface of the buffer layer, wherein the second epitaxial layer is grown from the first surface of the buffer layer, so that the carbon nanotube layer is sandwiched between the first epitaxial layer and the second epitaxial layer, and the buffer layer is sandwiched between the second epitaxial layer and the first epitaxial layer after growing the second epitaxial layer.

19. A method for making epitaxial structure, the method comprising:
placing a carbon nanotube layer on a first epitaxial growth surface of a substrate, wherein the carbon nanotube layer defines a plurality of apertures, a portion of the first epitaxial growth surface is exposed from the plurality of apertures;
growing a buffer layer on the first epitaxial growth surface exposed from the plurality of apertures;
growing a first epitaxial layer on the buffer layer, so that the carbon nanotube layer is between the substrate and the first epitaxial layer;
removing the substrate to expose the buffer layer; and
growing a second epitaxial layer on the exposed buffer layer, so that the buffer layer is sandwiched between the second epitaxial layer and the first epitaxial layer after growing the second epitaxial layer.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Wei Yang
• Fan Shou-Shan

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/3202 Primary

  Materials thereof · CPC title

• H10P14/2901

  Materials · CPC title