Solution deposition method for forming metal oxide or metal hydroxide layer

Patent metadata

Field	Value
Publication number	US-10689775-B2
Application number	US-201816164795-A
Country	US
Kind code	B2
Filing date	Oct 19, 2018
Priority date	Nov 10, 2014
Publication date	Jun 23, 2020
Grant date	Jun 23, 2020

Abstract

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

First claim

What is claimed is:

1. An optoelectronic device, comprising:
a substrate comprising epitaxial layers of a group III-Nitride semiconductor;
a seed layer formed on the substrate, the seed layer comprising an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, and the seed layer being substantially free of organic compounds; and
a bulk layer formed on the seed layer,
wherein the bulk layer comprises an oxide of second metal, a hydroxide of the second metal, or a combination thereof, with the second metal being different from the first metal.

2. The optoelectronic device of claim 1 , wherein the seed layer has a thickness of about 2 nm to about 20 nm.

3. The optoelectronic device of claim 1 , wherein the seed layer covers only a selected portion of the surface of the substrate, and the bulk layer is disposed only on the selected portion.

4. The optoelectronic device of claim 1 , wherein the seed layer is a ZnO seed layer and includes at least one additional element selected from the group of Li, Na, Be, Mg, Ti, Zr, Hf, Cr, Mo, W, Mn, Fe, Co, Ni, Cu, Cd, Al, Ga, In, Si, Ge, Sn, P, As, S, Se, and F.

5. The optoelectronic device of claim 1 , wherein:
the seed layer is formed by applying a liquid precursor solution to the substrate, the precursor solution comprising the oxide of the first metal, the hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution;
evaporating the liquid precursor solution to directly form a solid seed layer, and
the bulk layer is grown on the substrate using the seed layer as a growth site or a nucleation site.

6. The optoelectronic device of claim 5 , wherein the solid seed layer is processed by at least one of dehydrating, crystallizing, and recrystallizing the seed layer, and heating the seed layer at a temperature ranging from 100° C. to 600° C. before the bulk layer is grown.

7. The optoelectronic device of claim 6 , wherein the precursor solution further comprises 25% to 30% aqueous ammonia and dissolved ZnO powder or dissolved Zn(OH) 2 powder.

Assignees

• Seoul Semiconductor Co Ltd

Inventors

• Richardson Jacob J
• O'Hara Evan C
• Estrada Daniel

Classifications

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/6508

  by exposure to a liquid · CPC title

• H10P14/6506

  Formation of intermediate materials · CPC title

• H10P14/6349

  Deposition of epitaxial materials · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title