Crucible and crystal growth equipment
US-2021340689-A1 · Nov 4, 2021 · US
Edge-defined film-fed crystal-growth using dies or slits
Edge-defined film-fed crystal-growth using dies or slits · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B15/34 |
| Official title | Edge-defined film-fed crystal-growth using dies or slits |
| Display label | Edge-defined film-fed crystal-growth using dies or slits |
| Total patents | 85 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 8 |
| 2016 | 9 |
| 2017 | 14 |
| 2018 | 12 |
| 2019 | 7 |
| 2020 | 6 |
| 2021 | 11 |
| 2022 | 8 |
| 2023 | 6 |
| 2025 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method for preparing single crystal superalloy test bars by using ni-w heterogeneous seed crystal
US-2021277500-A1 · Sep 9, 2021 · US
Method for growing β phase of gallium oxide ([β]-Ga2O3) single crystals from the melt contained within a metal crucible
US-11028501-B2 · Jun 8, 2021 · US
Single crystal, die for efg apparatus, efg apparatus, method for manufacturing single crystal, and method for manufacturing single crystal member
US-2021017667-A1 · Jan 21, 2021 · US
Transparent ceramic with complex geometry
US-10875812-B2 · Dec 29, 2020 · US
Medical Instrument Made of Mono-Crystalline Shape Memory Alloys and Manufacturing Methods
US-2020332440-A1 · Oct 22, 2020 · US
Transparent ceramic with complex geometry
US-2020317578-A1 · Oct 8, 2020 · US
Sapphire ribbon and apparatus for manufacturing single crystal ribbons
US-2020308726-A1 · Oct 1, 2020 · US
Tubular sapphire member, heat exchanger, semiconductor manufacturing device, and method for manufacturing tubular sapphire member
US-2020048790-A1 · Feb 13, 2020 · US
Method for growing β-GA2O3-based single crystal
US-10526721-B2 · Jan 7, 2020 · US
Apparatus for controlling heat flow within a silicon melt
US-2019338442-A1 · Nov 7, 2019 · US
Apparatus for controlling heat flow within a silicon melt
US-2019284715-A1 · Sep 19, 2019 · US
Apparatus for controlling heat flow within a silicon melt
US-10415151-B1 · Sep 17, 2019 · US
Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure
US-10230007-B2 · Mar 12, 2019 · US
High voltage withstand Ga2O3-based single crystal schottky barrier diode
US-10199512-B2 · Feb 5, 2019 · US
β-Ga2O3 single-crystal substrate
US-10196756-B2 · Feb 5, 2019 · US
Semiconductor wafer and method
US-10199216-B2 · Feb 5, 2019 · US
High withstand voltage schottky barrier diode
US-2018254355-A1 · Sep 6, 2018 · US
Melt fixture and a sapphire component
US-2018223446-A1 · Aug 9, 2018 · US
Crystal material, method for manufacturing crystal, radiation detector, nondestructive inspection apparatus, and imaging apparatus
US-10011770-B2 · Jul 3, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B15/34?
- CPC C30B15/34 is the Cooperative Patent Classification code for “Edge-defined film-fed crystal-growth using dies or slits.”
- How many patents are filed under CPC C30B15/34 (Edge-defined film-fed crystal-growth using dies or slits)?
- Our database includes 85 publications tagged with this CPC code.
- Is patent activity under CPC C30B15/34 growing?
- Publication counts under this code: 6 in 2023 vs 4 in 2025 (latest complete years).