Use of quartz plates during growth of single crystal silicon ingots
US-12146236-B2 · Nov 19, 2024 · US
US2021017667A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021017667-A1 |
| Application number | US-201816769745-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 6, 2018 |
| Priority date | Dec 7, 2017 |
| Publication date | Jan 21, 2021 |
| Grant date | — |
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A single crystal of the present disclosure is a plate-shaped body having two main surfaces that are opposite to each other, and has bubbles arranged in a plurality of line shapes parallel to the main surface in a region within a depth of 0.5 mm from either one of the main surfaces. Additionally, a single crystal of the present disclosure is a plate-shaped body having two main surfaces that are opposite to each other, and has bubbles arranged in a plurality of line shapes parallel to the main surface within a region from either one of the main surfaces to ¼ of the thickness which is a distance between the main surfaces.
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1 . A single crystal comprising a plate-shaped body having two main surfaces opposite to each other, wherein the plate-shaped body comprises bubbles arranged in a plurality of line shapes parallel to the main surface in a region within a depth of 0.5 mm from either one of the main surfaces. 2 . The single crystal according to claim 1 , wherein a bubble density in the region within a depth of 0.5 mm from either one of the main surfaces is larger than that in a region apart from a depth of 0.5 mm or more from the main surface. 3 . The single crystal according to claim 1 , wherein the bubbles are arranged in each of the regions within a depth of 0.5 mm from the two main surfaces. 4 . The single crystal according to claim 1 , wherein the bubbles are arranged in a region within a depth of 0.3 mm from the two main surfaces. 5 . The single crystal according to claim 1 , wherein the bubbles are arranged within a region from the main surfaces to ¼ of the thickness which is a distance between the main surfaces. 6 . A single crystal comprising a plate-shaped body having two main surfaces opposite to each other, wherein the plate-shaped body comprises bubbles arranged in a plurality of line shapes parallel to the main surface within a region from either one of the main surfaces to ¼ of the thickness which is a distance between the main surfaces. 7 . The single crystal according to claim 6 , wherein a bubble density within a region from either one of the main surfaces to ¼ of the thickness which is a distance between the main surfaces is larger than a bubble density in a region that is more than ¼ of the thickness, which is a distance between the main surfaces, away from either one of the main surfaces. 8 . The single crystal according to claim 6 , wherein the bubbles are arranged in each of the regions from the two main surfaces to ¼ of the thickness which is a distance between the main surfaces. 9 . The single crystal according to claim 1 , wherein the material is sapphire. 10 . A die for an EFG apparatus comprising: two outer surfaces, at least one slit disposed between the outer surfaces and providing a melt, and two upper surfaces connecting an inner surface of the slit and the outer surfaces, wherein an angle θ formed by the upper surface and a virtual surface perpendicular to the outer surfaces is 60° or more and 85° or less. 11 . The die for the EFG apparatus according to claim 10 , wherein the angle θ of the upper surface is fixed. 12 . A die for an EFG apparatus comprising: two outer surfaces, at least one slit disposed between the outer surfaces and providing a melt, and two upper surfaces connecting an inner surface of the slit and the outer surfaces, wherein the upper surface comprises a first region connecting to the inner surface of the slit, and a second region connecting to the outer surface, wherein an angle θ 1 formed by the first region and a virtual surface perpendicular to the outer surface is smaller than an angle θ 2 formed by the second region and a virtual surface perpendicular to the outer surface. 13 . The die for the EFG apparatus according to claim 12 , wherein the angle θ 1 is 0° or more and 30° or less. 14 . The die for the EFG apparatus according to claim 12 , wherein the angle θ 1 is fixed in the first region. 15 . The die for the EFG apparatus according to claim 12 , wherein the angle θ 2 is 60° or more and 85° or less. 16 . The die for the EFG apparatus according to claim 12 , wherein the angle θ 2 is fixed in the second region. 17 . The die for the EFG apparatus according to claim 12 , wherein a thickness of the first region is larger than a thickness of the second region. 18 . The die for the EFG apparatus according to claim 12 , further comprising a third region, which has an angle θ 3 formed with the virtual surface, between the first region and the second region, wherein the angle θ 3 is larger than the angle θ 2 . 19 . The die for the EFG apparatus according to claim 18 , wherein the angle θ 3 is 70° or more and 90° or less. 20 . The die for the EFG apparatus according to claim 18 , wherein the angle θ 3 is fixed in the third region. 21 . The die for the EFG apparatus according to claim 18 , wherein a thickness of the third region is smaller than a thickness of the second region. 22 . The die for the EFG apparatus according to claim 10 for growing sapphire. 23 . An EFG apparatus comprising: the die for the EFG apparatus according to claim 10 . 24 . A method of manufacturing a single crystal comprising: a step for growing a single crystal by using the EFG apparatus according to claim 23 . 25 . A method of manufacturing a single crystal member comprising: a step for removing at least a part of a surface region having bubbles of the single crystal according to claim 1 .
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