Schottky barrier diode
US-2017162655-A1 · Jun 8, 2017 · US
High voltage withstand Ga2O3-based single crystal schottky barrier diode
US10199512B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10199512-B2 |
| Application number | US-201615559702-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 9, 2016 |
| Priority date | Mar 20, 2015 |
| Publication date | Feb 5, 2019 |
| Grant date | Feb 5, 2019 |
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Abstract
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A high withstand voltage Schottky barrier diode includes a first layer that includes a first Ga 2 O 3 -based single crystal including a first Group IV element and Cl at a concentration of not more than 5×10 16 cm −3 and that has an effective donor concentration of not less than 1×10 13 and not more than 6.0×10 17 cm −3 , a second layer that includes a second Ga 2 O 3 -based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.
First claim
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The invention claimed is: 1. A high withstand voltage Schottky barrier diode, comprising: a first layer that comprises a first Ga 2 O 3 -based single crystal including a first Group IV element and Cl at a concentration of not more than 5×10 16 cm −3 and that has an effective donor concentration of not less than 1×10 13 and not more than 6.0×10 17 cm −3 ; a second layer that comprises a second Ga 2 O 3 -based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer; an anode electrode formed on the first layer; and a cathode electrode formed on the second layer. 2. The high withstand voltage Schottky barrier diode according to claim 1 , wherein the effective donor concentration of the first layer is not more than 2.0×10 16 cm −3 . 3. The high withstand voltage Schottky barrier diode according to claim 2 , wherein the effective donor concentration of the first layer is not more than 1.4×10 16 cm −3 . 4. The high withstand voltage Schottky barrier diode according to claim 3 , wherein the first Group IV element comprises Si. 5. The high withstand voltage Schottky barrier diode according to claim 3 , wherein the first Ga 2 O 3 -based single crystal comprises a Ga 2 O 3 single crystal. 6. The high withstand voltage Schottky barrier diode according to claim 3 , wherein a layer of the cathode electrode contacts with the second layer and comprises Ti. 7. The high withstand voltage Schottky barrier diode according to claim 2 , wherein the first Group IV element comprises Si. 8. The high withstand voltage Schottky barrier diode according to claim 2 , wherein the first Ga 2 O 3 -based single crystal comprises a Ga 2 O 3 single crystal. 9. The high withstand voltage Schottky barrier diode according to claim 2 , wherein a layer of the cathode electrode contacts with the second layer and comprises Ti. 10. The high withstand voltage Schottky barrier diode according to claim 1 , wherein the first Group IV element comprises Si. 11. The high withstand voltage Schottky barrier diode according to claim 1 , wherein the first Ga 2 O 3 -based single crystal comprises a Ga 2 O 3 single crystal. 12. The high withstand voltage Schottky barrier diode according to claim 1 , wherein a layer of the cathode electrode contacts with the second layer and comprises Ti.
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Classifications
N-type · CPC title
Conductivity type · CPC title
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
Crystal orientations · CPC title
being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title
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- What does patent US10199512B2 cover?
- A high withstand voltage Schottky barrier diode includes a first layer that includes a first Ga 2 O 3 -based single crystal including a first Group IV element and Cl at a concentration of not more than 5×10 16 cm −3 and that has an effective donor concentration of not less than 1×10 13 and not more than 6.0×10 17 cm −3 , a second layer that includes a second Ga 2 O 3 -based single crystal i…
- Who is the assignee on this patent?
- Tamura Seisakusho Kk, Nat Inst Inf & Comm Tech, National Univ Corporation Tokyo Univ Of Agriculture And Technology
- What technology area does this patent fall under?
- Primary CPC classification H01L29/872. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 05 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).