Apparatus for controlling heat flow within a silicon melt

Patent metadata

Field	Value
Publication number	US-10415151-B1
Application number	US-201414227006-A
Country	US
Kind code	B1
Filing date	Mar 27, 2014
Priority date	Mar 27, 2014
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.

First claim

What is claimed is:

1. An apparatus for controlling heat flow within a melt, comprising:
a crucible configured to contain the melt, the melt having an exposed surface;
a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface;
a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt, wherein the heat diffusion barrier assembly is disposed below the exposed surface, and wherein the heater is disposed to generate in the isolation region a first heat flow density at the exposed surface, and is arranged to generate in the outer region a second heat flow density at the exposed surface, less than the first heat flow density, wherein the heat diffusion barrier assembly comprises a first heat diffusion barrier and second heat diffusion barrier that are angled, wherein the isolation region is wider toward a bottom of the crucible, wherein top portions of the first and second heat diffusion barriers are free and unattached to other structures such that the melt is disposed between the first heat diffusion barrier and the second heat diffusion barrier at a top portion of the diffusion barrier assembly; and
a crystal puller, disposed above the melt and movable along a direction parallel to the exposed surface.

2. The apparatus of claim 1 , wherein the at least one heat diffusion barrier is composed of fused silica.

3. The apparatus of claim 1 , wherein the melt is composed of silicon, and wherein a first portion of the heat that flows through the isolation region to the exposed surface has a first heat flow density that is greater than a second heat flow density for a second portion of the heat that flows from the isolation region through the at least one heat diffusion barrier to the outer region.

4. The apparatus of claim 1 , further comprising a crucible holder disposed between the heater and crucible and having at least one insulator spacer arranged to generate at least two heating zones that provide heat to the melt.

5. The apparatus of claim 4 , wherein the crucible holder is a heat intensifier.

6. The apparatus of claim 1 ,
wherein the heater is configured to generate heat flow into the isolation region across a heater width greater than the isolation region width,
wherein the heat flow at the surface region is uniform across the isolation region between the first heat diffusion barrier and second heat diffusion barrier.

7. An apparatus for processing a melt, comprising:
a heater disposed below a crucible that contains the melt, the heater being configured to supply heat through the melt to an exposed surface of the melt;
a heat diffusion barrier assembly comprising a first heat diffusion barrier and a second heat diffusion barrier that are disposed within the crucible and define an isolation region in the melt and an outer region in the melt, wherein the heat diffusion barrier assembly is disposed below the exposed surface, wherein the first heat diffusion barrier and second heat diffusion barrier are angled, wherein the isolation region is wider-toward a bottom of the crucible, wherein top portions of the first and second heat diffusion barriers are free and unattached to other structures such that the melt is disposed between the first heat diffusion barrier and the second heat diffusion barrier at a top portion of the diffusion barrier assembly, and wherein the heater is disposed to generate in the isolation region a first heat flow density at the exposed surface, and is arranged to generate in the outer region a second heat flow density at the exposed surface, less than the first heat flow density,
wherein the first heat flow density is greater than a third heat flow density that flows from the isolation region through the at least one heat diffusion barrier to the outer region; and
a crystal puller, disposed above the melt and movable along a direction parallel to the exposed surface.

8. The apparatus of claim 7 , wherein the crucible and heat diffusion barrier assembly are composed of fused silica.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Kellerman Peter L
• Carlson Frederick M
• Morrell David
• Moradian Ala
• Desai Nandish

Classifications

• C30B15/06

  Non-vertical pulling · CPC title

• Y10T117/1068

  including heating or cooling details [e.g., shield configuration] · CPC title

• C30B29/06 Primary

  Silicon · CPC title

• C30B15/34

  Edge-defined film-fed crystal-growth using dies or slits · CPC title

• C30B15/24 Primary

  using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B15/34) · CPC title