Method for manufacturing silicon single crystal

Patent metadata

Field	Value
Publication number	US-9809901-B2
Application number	US-201415027414-A
Country	US
Kind code	B2
Filing date	Oct 16, 2014
Priority date	Nov 22, 2013
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

A method for manufacturing a silicon single crystal according to a Czochralski method to manufacture an N-type silicon single crystal, including the steps of: seeding to bring a seed crystal into contact with a silicon melt in a crucible and thereafter, necking to pull the seed crystal to narrow a diameter thereof, wherein a dopant concentration in the silicon melt is predicted by a difference between a temperature at the seeding and a temperature at the necking, and resistivity of the single crystal to be pulled is controlled on the basis of the predicted dopant concentration in the silicon melt. A method for manufacturing a silicon single crystal can efficiently manufacture a silicon single crystal with a desired resistivity.

First claim

The invention claimed is:

1. A method for manufacturing a silicon single crystal according to a Czochralski method to manufacture an N-type silicon single crystal, comprising the steps of: seeding to bring a seed crystal into contact with a silicon melt in a crucible and thereafter, necking to pull the seed crystal to narrow a diameter thereof, wherein
a dopant concentration in the silicon melt is predicted by a difference between a temperature at the seeding and a temperature at the necking, and resistivity of the single crystal to be pulled is controlled on the basis of the predicted dopant concentration in the silicon melt.

2. The method for manufacturing a silicon single crystal according to claim 1 , wherein the dopant concentration in the silicon melt is predicted by a pre-examined correlation of resistivity of a produced single crystal with the difference between a temperature at the seeding and a temperature at the necking.

3. The method for manufacturing a silicon single crystal according to claim 1 , wherein the temperature at the seeding and the temperature at the necking are determined by a temperature of a graphite shield installed around a heater to heat the silicon melt.

4. The method for manufacturing a silicon single crystal according to claim 2 , wherein the temperature at the seeding and the temperature at the necking are determined by a temperature of a graphite shield installed around a heater to heat the silicon melt.

5. The method for manufacturing a silicon single crystal according to claim 1 , wherein the single crystal to be pulled is a phosphorus or arsenic-doped silicon single crystal having resistivity of 2 mΩ·cm or less.

6. The method for manufacturing a silicon single crystal according to claim 2 , wherein the single crystal to be pulled is a phosphorus or arsenic-doped silicon single crystal having resistivity of 2 mΩ·cm or less.

7. The method for manufacturing a silicon single crystal according to claim 3 , wherein the single crystal to be pulled is a phosphorus or arsenic-doped silicon single crystal having resistivity of 2 mΩ·cm or less.

8. The method for manufacturing a silicon single crystal according to claim 4 , wherein the single crystal to be pulled is a phosphorus or arsenic-doped silicon single crystal having resistivity of 2 mΩ·cm or less.

9. The method for manufacturing a silicon single crystal according to claim 1 , wherein a difference between an aimed dopant concentration in the silicon melt and the predicted dopant concentration in the silicon melt is adjusted on the basis of an evaporation amount of the dopant in manufacturing the single crystal.

10. The method for manufacturing a silicon single crystal according to claim 2 , wherein a difference between an aimed dopant concentration in the silicon melt and the predicted dopant concentration in the silicon melt is adjusted on the basis of an evaporation amount of the dopant in manufacturing the single crystal.

11. The method for manufacturing a silicon single crystal according to claim 3 , wherein a difference between an aimed dopant concentration in the silicon melt and the predicted dopant concentration in the silicon melt is adjusted on the basis of an evaporation amount of the dopant in manufacturing the single crystal.

12. The method for manufacturing a silicon single crystal according to claim 4 , wherein a difference between an aimed dopant concentration in the silicon melt and the predicted dopant concentration in the silicon melt is adjusted on the basis of an evaporation amount of the dopant in manufacturing the single crystal.

13. The method for manufacturing a silicon single crystal according to claim 9 , wherein the evaporation amount of the dopant is adjusted by changing a furnace pressure at a start of growing a straight body.

14. The method for manufacturing a silicon single crystal according to claim 10 , wherein the evaporation amount of the dopant is adjusted by changing a furnace pressure at a start of growing a straight body.

15. The method for manufacturing a silicon single crystal according to claim 11 , wherein the evaporation amount of the dopant is adjusted by changing a furnace pressure at a start of growing a straight body.

16. The method for manufacturing a silicon single crystal according to claim 12 , wherein the evaporation amount of the dopant is adjusted by changing a furnace pressure at a start of growing a straight body.

17. The method for manufacturing a silicon single crystal according to claim 1 , wherein a silicon single crystal having a dislocation occurred during being pulled is melted to the silicon melt and the other silicon single crystal is re-pulled therefrom, wherein
the silicon melt after melting the silicon single crystal having a dislocation is additionally doped with a dopant in an amount reflecting the difference between an aimed dopant concentration and the predicted dopant concentration in the silicon melt, and then the other silicon single crystal is re-pulled.

18. The method for manufacturing a silicon single crystal according to claim 2 , wherein a silicon single crystal having a dislocation occurred during being pulled is melted to the silicon melt and the other silicon single crystal is re-pulled therefrom, wherein
the silicon melt after melting the silicon single crystal having a dislocation is additionally doped with a dopant in an amount reflecting the difference between an aimed dopant concentration and the predicted dopant concentration in the silicon melt, and then the other silicon single crystal is re-pulled.

19. The method for manufacturing a silicon single crystal according to claim 1 , wherein the single crystal is pulled while a horizontal magnetic field with a central magnetic field strength of 0.15 T or more is applied.

20. The method for manufacturing a silicon single crystal according to claim 2 , wherein the single crystal is pulled while a horizontal magnetic field with a central magnetic field strength of 0.15 T or more is applied.

Assignees

• Shinetsu Handotai Kk

Inventors

• Soeta Satoshi
• Nakano Shinji
• Ikeda Kouichi

Classifications

• C30B15/206 Primary

  the thermal history of growing the ingot · CPC title

• C30B29/06

  Silicon · CPC title

• C30B15/04 Primary

  adding doping materials, e.g. for n-p-junction · CPC title

• C30B30/04

  using magnetic fields · CPC title

• C30B15/14

  Heating of the melt or the crystallised materials · CPC title