Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof

Patent metadata

Field	Value
Publication number	US-9834861-B2
Application number	US-201615198893-A
Country	US
Kind code	B2
Filing date	Jun 30, 2016
Priority date	Mar 3, 2016
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

This invention provides a method for growing monocrystalline silicon by applying Czochralski method comprising forming a melt of silicon-containing materials in a crucible and pulling the melt for monocrystalline silicon growth, which is characterized by, the silicon-containing materials comprising a deuterium-implanted nitride-deposited silicon and a monocrystalline silicon, introducing a gas containing argon during formation of the melt, and, applying a magnetic field during the pulling step. This invention also provides a method for producing a wafer based on the above monocrystalline silicon.

First claim

What is claimed is:

1. A method for growing monocrystalline silicon by applying Czochralski method comprising forming a melt of silicon-containing materials in a crucible and pulling the melt for monocrystalline silicon growth, which is characterized by, using the silicon-containing materials comprising silicon pieces and polysilicon bulks, wherein the silicon pieces have surface growth of silicon nitride and are doped with deuterium;
introducing a gas containing argon during formation of the melt; and
applying a magnetic field during the pulling step.

2. The method of claim 1 , wherein the silicon nitride is grown by low pressure chemical vapor deposition or plasma chemical vapor deposition.

3. The method of claim 2 , wherein the silicon nitride has a thickness of 20-5000 nm.

4. The method of claim 1 , wherein the silicon pieces are doped with deuterium by ion implantation after growth of silicon nitride.

5. The method of claim 4 , wherein ion implantation has an implantation energy of 1 keV to 800 keV and an implantation dose of 1×10 12 to 1×10 18 ions/cm 2 .

6. The method of claim 1 , which comprises the following steps:
melting the silicon-containing materials comprising silicon pieces and polysilicon bulks in the crucible under a predetermined temperature, wherein the silicon pieces have surface growth of silicon nitride and are doped with deuterium;
applying a magnetic field; pulling a crystal rod upward by a predetermined pulling rate from a crystal seed until reaching a predetermined length of the crystal rod;
reducing the pulling rate and maintaining a linear cooling rate to form a monocrystalline silicon ingot with a predetermined diameter; and
while the monocrystalline silicon ingot has the predetermined diameter, increasing the pulling rate, simultaneously cooling and terminating the linear cooling to stabilize the diameter of the monocrystalline silicon ingot, and continuously growing the monocrystalline silicon ingot.

7. The method of claim 1 , wherein the magnetic field has an intensity of 1000 to 5000 Gauss.

8. A method for producing a wafer comprising applying a monocrystalline silicon ingot prepared by the method of claim 1 , which is characterized by that, the wafer comprises 1×10 13 to 1×10 16 nitrogen atoms/cm 3 .

9. The method of claim 1 , wherein the wafer comprises 1×10 12 to 1×10 18 deuterium atoms/cm 3 .

10. The method of claim 9 , wherein the monocrystalline silicon ingot is treated with cutting, surface grinding, polishing, edge finishing and washing to form the wafer.

Assignees

• Zing Semiconductor Corp

Inventors

• Xiao Deyuan
• Chang Richard R

Classifications

• C30B30/04

  using magnetic fields · CPC title

• C30B15/002

  Continuous growth · CPC title

• C30B15/203

  the relationship of pull rate (v) to axial thermal gradient (G) · CPC title

• C30B29/06 Primary

  Silicon · CPC title

• C30B15/14

  Heating of the melt or the crystallised materials · CPC title