Semiconductor Device, Silicon Wafer and Silicon Ingot
US-2015349066-A1 · Dec 3, 2015 · US
Semiconductor device, silicon wafer and silicon ingot
US9786748B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9786748-B2 |
| Application number | US-201514722591-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 27, 2015 |
| Priority date | May 28, 2014 |
| Publication date | Oct 10, 2017 |
| Grant date | Oct 10, 2017 |
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- Title
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Abstract
Official abstract text for this publication.
A CZ silicon ingot is doped with donors and acceptors and includes an axial gradient of doping concentration of the donors and of the acceptors. An electrically active net doping concentration, which is based on a difference between the doping concentrations of the donors and acceptors varies by less than 60% for at least 40% of an axial length of the CZ silicon ingot due to partial compensation of at least 20% of the doping concentration of the donors by the acceptors.
First claim
Opening claim text (preview).
What is claimed is: 1. A CZ silicon ingot comprising donors and acceptors and having an axial gradient of doping concentration of the donors and of the acceptors, wherein at least 20% of the doping concentration of the donors is compensated by the acceptors so that an electrically active net doping concentration of the CZ silicon ingot, which is based on a difference between the doping concentrations of the donors and acceptors, varies by less than 60% for at least 40% of an axial length of the CZ silicon ingot. 2. The CZ silicon ingot of claim 1 , wherein the electrically active net doping concentration varies by less than 20% of the electrically active net doping concentration for the at least 40% of the axial length of the CZ silicon ingot. 3. The CZ silicon ingot of claim 1 , wherein the donors include at least one of phosphorus, arsenic and antimony. 4. The CZ silicon ingot of claim 1 , wherein the acceptors include boron. 5. The CZ silicon ingot of claim 1 , wherein the acceptors further include at least one of aluminum, gallium and indium. 6. The CZ silicon ingot of claim 1 , wherein a net n-type doping concentration of the CZ silicon ingot is in a range from 1×10 13 cm −3 to 3×10 14 cm −3 .
Assignees
Inventors
Classifications
Silicon · CPC title
adding doping materials, e.g. for n-p-junction · CPC title
Controlling or regulating (controlling or regulating in general G05) · CPC title
After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title
Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) · CPC title
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- What does patent US9786748B2 cover?
- A CZ silicon ingot is doped with donors and acceptors and includes an axial gradient of doping concentration of the donors and of the acceptors. An electrically active net doping concentration, which is based on a difference between the doping concentrations of the donors and acceptors varies by less than 60% for at least 40% of an axial length of the CZ silicon ingot due to partial compensatio…
- Who is the assignee on this patent?
- Infineon Technologies Ag
- What technology area does this patent fall under?
- Primary CPC classification H01L29/36. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).