Silicon single crystal growing apparatus and silocon single crystal growing method using same

Patent metadata

Field	Value
Publication number	US-10072352-B2
Application number	US-201515327260-A
Country	US
Kind code	B2
Filing date	Jul 10, 2015
Priority date	Aug 5, 2014
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

An exemplary embodiment of the present invention provides a silicon single crystal growing apparatus and method. The apparatus comprises: a chamber; a crucible that is disposed in the chamber and receives melted silicon; a heater disposed outside the crucible to heat the crucible; a heat shield part disposed in the chamber; and an auxiliary heat shield part disposed above the crucible to move upward and downward, wherein the auxiliary heat shield part is disposed to be separated from a body part of a single crystal that has grown from the melted silicon, and a rising speed is controlled such that a defect-free zone in the single crystal body part increases. The auxiliary heat shield part can reduce a deviation of a temperature gradient in the body part, whereby increasing the distribution of a defect-free zone in the body part.

First claim

The invention claimed is:

1. A silicon single-crystal growing apparatus comprising:
a chamber;
a crucible placed in the chamber for accommodating a silicon melt;
a heater placed outside the crucible for heating the crucible;
a heat shield unit placed in the chamber;
an auxiliary heat shield unit placed above the crucible so as to be vertically movable;
a main controller for controlling a pulling speed of a single-crystal ingot that is grown in the silicon melt;
an auxiliary controller for controlling a rising speed of the auxiliary heat shield unit; and
a pulling device for pulling each of the single-crystal ingot and the auxiliary heat shield unit based on a control signal input from the main controller and the auxiliary controller,
wherein the auxiliary heat shield unit has a truncated conical shape,
wherein the single-crystal ingot includes a shoulder portion and a body portion, and
wherein the auxiliary heat shield unit is provided above a boundary of the shoulder portion and the body portion of the single-crystal ingot by a predetermined distance.

2. The apparatus according to claim 1 , wherein the auxiliary controller includes:
a position value sensing unit for detecting a position of a body portion of the single-crystal ingot and a position of the auxiliary heat shield unit;
a gap calculator for calculating a distance between the body portion and the auxiliary heat shield unit based on the positions of the body portion and the auxiliary heat shield unit detected by the position value sensing unit;
a correction value generator for generating a correction value of the rising speed of the auxiliary heat shield unit based on a value output from the gap calculator; and
a first drive unit for outputting a changed rising speed value based on the generated correction value to transmit the output value to the pulling device.

3. The apparatus according to claim 2 , wherein the correction value generator generates the correction value so as to allow the auxiliary heat shield unit to maintain a predetermined distance from the body portion of the single-crystal ingot.

4. The apparatus according to claim 2 , wherein the main controller includes:
a diameter-sensing unit for detecting a diameter of the single-crystal ingot;
a pulling-speed determination unit for determining the pulling speed of the single-crystal ingot based on a diameter value detected by the diameter-sensing unit; and
a second drive unit for outputting a determined pulling speed value to transmit the output value to the pulling device.

5. The apparatus according to claim 1 , wherein the pulling device includes:
a first pulling unit connected to an upper surface of the auxiliary heat shield unit via a first wire; and
a second pulling unit connected to the single-crystal ingot via a second wire.

6. A silicon single-crystal growing method performed in a silicon single-crystal growing apparatus including a chamber, a crucible placed in the chamber for accommodating a silicon melt, a heat shield unit placed in the chamber, and an auxiliary heat shield unit placed above the crucible so as to be vertically movable, the method comprising: controlling a rising speed of the auxiliary heat shield unit so that the auxiliary heat shield unit maintains a predetermined distance from a body portion of a single-crystal ingot that is grown in the silicon melt so as to increase distribution of a defect-free area in the single-crystal ingot body portion,
wherein the auxiliary heat shield unit has a truncated conical shape, and
wherein the rising speed of the auxiliary heat shield unit is controlled so that the auxiliary heat shield unit is upwardly spaced apart from a boundary of a shoulder portion and the body portion of the single-crystal ingot by a distance ranging from 150 mm to 300 mm.

7. The method according to claim 6 , wherein the rising speed of the auxiliary heat shield unit is controlled so as to reduce a difference in temperature between a center and a periphery of a cross section of the body portion, which is perpendicular to a rising direction of the auxiliary heat shield unit.

8. The method according to claim 6 , wherein the rising speed of the auxiliary heat shield unit is controlled so as to reduce a difference in cooling rate between a center and a periphery of a cross section of the body portion, which is perpendicular to a rising direction of the auxiliary heat shield unit.

9. The apparatus according to claim 1 , wherein the auxiliary heat shield unit is formed of graphite or carbon composite material.

10. The method according to claim 6 , wherein the auxiliary heat shield unit is formed of graphite or carbon composite material.

Assignees

• Sk Siltron Co Ltd

Inventors

• Kim Do Yeon
• Choi Il Soo
• An Yun Ha

Classifications

• C30B15/203 Primary

  the relationship of pull rate (v) to axial thermal gradient (G) · CPC title

• C30B29/06

  Silicon · CPC title

• C30B15/02

  adding crystallising materials or reactants forming it in situ to the melt · CPC title

• C30B15/14 Primary

  Heating of the melt or the crystallised materials · CPC title

• C30B15/04

  adding doping materials, e.g. for n-p-junction · CPC title