Dishing reducing in tungsten chemical mechanical polishing

Patent metadata

Field	Value
Publication number	US-2016237315-A1
Application number	US-201615014210-A
Country	US
Kind code	A1
Filing date	Feb 3, 2016
Priority date	Feb 12, 2015
Publication date	Aug 18, 2016
Grant date	—

Abstract

This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Additives are used to reduce the dishing on large and small feature sizes (large bond pad as well as fine line structures) without retarding the tungsten removal rate.

First claim

1 . A polishing composition comprising:
0.01 wt % to 30 wt % of abrasive; 0.01 wt % to 30 wt % of at least one oxidizing agent; 0.0005 wt % to about 10 wt % of activator; 0.1 ppm to 10,000 ppm of additive; pH adjusting agent; and remaining being water; wherein the abrasive is selected from the group consisting of colloidal silica, fumed silica, alumina, titania, ceria, zirconia, surface modified particles selected from the group consisting of activator-containing particles, composite particles, and lattice doped and inorganic oxide particles; and combinations thereof; the oxidizing agent is selected from the group consisting of peroxy compound selected from the group consisting of hydrogen peroxide, urea peroxide, peroxyformic acid, peracetic acid, propaneperoxoic acid, substituted or unsubstituted butaneperoxoic acid, hydroperoxy-acetaldehyde, potassium periodate, ammonium peroxymonosulfate; and non-per-oxy compound selected from the group consisting of ferric nitrite, KClO 4 , KBrO 4 , KMnO 4 ; and combinations thereof; the activator is selected from the group consisting of (1) inorganic oxide particle with transition metal coated onto its surface; and the transition metal is selected from the group consisting of Fe, Cu, Mn, Co, Ce, and combinations thereof; (2) soluble catalyst selected from the group consisting of ammonium iron (III) oxalate trihydrate, iron(III) citrate tribasic monohydrate, iron(III) acetylacetonate and ethylenediamine tetraacetic acid, iron (III) sodium salt hydrate; (3) a metal compound having multiple oxidation states selected from the group consisting of Ag, Co, Cr, Cu, Fe, Mo, Mn, Nb, Ni, Os, Pd, Ru, Sn, Ti, V; and combinations thereof; the additive is selected from the group consisting of sarcosinate, sarcosinates related carboxylic compound, hydrocarbon substituted sarcosinate; organic polymer and copolymer having molecules containing ethylene oxide repeating units; ethoxylated surfactant; and combinations thereof; the pH adjusting agent is selected from the group consisting of amine, ammonium hydroxide, nitric acid, phosphoric acid, sulfuric acid, organic acid, and/or salt thereof, and combinations thereof; and pH of the composition is between 2 and 10.

2 . The polishing composition of claim 1 , wherein
the sarcosinate is selected from the group consisting of cocoyl, lauroyl, myristoyl, oleoyl, stearoyl sarcosinate, and combinations thereof; the sarcosinates related carboxylic compound is selected from the group consisting of unsaturated salt of fatty acid selected from the group consisting of myristoleic, palmitoleic, sapienic, oleic, elaidic, vaccenic, linoleic, linoelaidic, α-linolenic, arachidocnic, eicosapentaenoic, erucic decosahexaenoic acid; and salt of saturated fatty acid selected from the group consisting of sodium, potassium, or ammonia salts of stearate, caprylic, capric, lauric, myristic, palmitic, stearic, arachidic, behenic, lignoceric and cerotic acid; and combinations thereof; the hydrocarbon substituted sarcosinate has a substituent selected from the group consisting of an alkyl, alkenyl or alkynyl, having ranging from 1 carbon atom for the alkyl substituent, 2 carbon atoms for the alkenyl, or 3 up to 24 carbon atoms for alkynyl substituent, wherein the number of double bonds for the alkenyl substituent or the number of triple bonds for the alkynyl substituent is up to 4.

3 . The polishing composition of claim 1 , wherein the organic polymer and copolymer have molecules containing ethylene oxide repeating units is polyoxyethylene (POE), polyethylene oxide (PEO), or polyethylene glycol (PEG);
wherein the polyethylene oxide (PEO) has the general molecular structure of

wherein n refers to the total numbers of the repeating unit ranging from 4 to 113636.

4 . The polishing composition of claim 1 , wherein the ethoxylated surfactant is selected from the group consisting of alkyl phenol ethoxylate, fatty alcohol ethoxylate, fatty amine ethoxylate, propylene glycol (PPG)-ethylene glycol (PEG) block copolymer, polyether silicone surfactant, and combinations thereof.

5 . The polishing composition of claim 1 , wherein the additive is selected from the group consisting of polyethylene oxide (PEO), oleoyl sarcosinate, N-Lauroylsarcosinate, fatty alcohol ethoxylate, fatty amine ethoxylate, propylene glycol (PPG)-ethylene glycol (PEG) block copolymer, polyether silicone surfactant, and combinations thereof;

6 . The polishing composition of claim 1 comprises colloidal silica; iron coated silica particle or ammonium iron (III) oxalate trihydrate; hydrogen peroxide; one selected from the group consisting of propylene glycol (PPG)-ethylene glycol (PEG) block copolymer, polyether silicone surfactant, oleoyl sarcosinate, N-Lauroylsarcosinate, and combination thereof, and the pH is between 6 and 8.

7 . The polishing composition of claim 1 further comprises biocide ranging from 0.0001 wt % to 0.03 wt %.

8 . The polishing composition of claim 1 further comprises at least one selected from the group consisting of surfactant; stabilizing and passivating agent; dispersion agent; chelator; film-forming anticorrosion agent; a polish enhancement agent; and combinations thereof.

9 . A system for chemical mechanical planarization, comprising:
a semiconductor substrate comprising at least one surface containing tungsten; a polishing pad; and a polishing composition comprising:
0.01 wt % to 30 wt % of abrasive;
0.01 wt % to 30 wt % of at least one oxidizing agent;
0.0005 wt % to about 10 wt % of activator;
0.1 ppm to 10,000 ppm of additive;
pH adjusting agent; and
remaining being water;
wherein
the abrasive is selected from the group consisting of colloidal silica, fumed silica, alumina, titania, ceria, zirconia, surface modified particles selected from the group consisting of activator-containing particles, composite particles, and lattice doped and inorganic oxide particles; and combinations thereof;
the oxidizing agent is selected from the group consisting of peroxy compound selected from the group consisting of hydrogen peroxide, urea peroxide, peroxyformic acid, peracetic acid, propaneperoxoic acid, substituted or unsubstituted butaneperoxoic acid, hydroperoxy-acetaldehyde, potassium periodate, ammonium peroxymonosulfate; and non-per-oxy compound selected from the group consisting of ferric nitrite, KClO 4 , KBrO 4 , KMnO 4 ; and combinations thereof;
the activator is selected from the group consisting of (1) inorganic oxide particle with transition metal coated onto its surface; and the transition metal is selected from the group consisting of Fe, Cu, Mn, Co, Ce, and combinations thereof; (2) soluble catalyst selected from the group consisting of ammonium iron (III) oxalate trihydrate, iron(III) citrate tribasic monohydrate, iron(III) acetylacetonate and ethylenediamine tetraacetic acid, iron (III) sodium salt hydrate; (3) a metal compound having multiple oxidation states selected from the group consisting of Ag, Co, Cr, Cu, Fe, Mo, Mn, Nb, Ni, Os, Pd, Ru, Sn, Ti, V; and combinations thereof;
the additive is selected from the group consisting of sarcosinate and related carboxylic compound, hydrocarbon substituted sarcosinate; organic polymer and copolymer having molecules containing ethylene oxide repeating units; ethoxylated surfactant; and combinations thereof;
the pH adjusting agent is selected from the group consisting of amine, ammonium hydroxide, nitric acid, phosphoric acid, sulfuric acid, organic acid, and/or salt thereof, and combinations thereof; and
pH of the composition is between 2 and 10;
wherein the at least one surface containing tungsten is in co

Assignees

• Air Prod & Chem

Inventors

• Stender Matthias
• Lew Blake J
• Shi Xiaobo

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09G1/04

  Aqueous dispersions (C09G1/02 takes precedence) · CPC title

• C09K3/1445

  the coating consisting exclusively of metals · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title