Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method

Patent metadata

Field	Value
Publication number	US-9958791-B2
Application number	US-201415032507-A
Country	US
Kind code	B2
Filing date	Oct 13, 2014
Priority date	Oct 30, 2013
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

First claim

The invention claimed is:

1. An inspection apparatus for measuring a property of a lithographic process, the apparatus comprising:
a support configured to support a substrate, the substrate carrying a plurality of metrology targets comprising structures and smaller sub-structures formed by the lithographic process;
an optical system configured to illuminate the plurality of metrology targets under predetermined illumination conditions and to detect predetermined portions of radiation diffracted by the plurality of metrology targets under the illumination conditions;
a processor arranged to calculate, from the detected portions of diffracted radiation, a measurement of asymmetry for a specific target; and
a controller configured to cause said optical system and processor to measure asymmetry in at least two of the plurality of metrology targets, which have different known components of positional offset between the structures and the smaller sub-structures within a layer on the substrate and to calculate, from the results of the asymmetry measurements a measurement, of a performance parameter of the lithographic process for the smaller sub-structures.

2. The apparatus as claimed in claim 1 , wherein the performance parameter is an overlay parameter of the lithographic process for the smaller sub-structures and is calculated by combining results of the asymmetry measurements with measurements of asymmetry in at least two overlay targets which have different known components of positional offset between first and second layers on the substrate.

3. The apparatus as claimed in claim 2 , wherein the controller is configured to cause the optical system and processor to measure asymmetry in at least two auxiliary targets having different known components of positional offset in each of the first and second layers.

4. The apparatus as claimed in claim 1 , wherein the controller is configured to cause the optical system and processor to measure asymmetry in at least two of the metrology targets which have different known components of positional offset between interleaved populations of sub-structures within the metrology target and to calculate, from the results of the asymmetry measurements, a measurement of an overlay parameter of the lithographic process used to form the sub-structures.

5. The apparatus as claimed in claim 1 , wherein:
the optical system is configured to form and detect images using radiation diffracted by at least two of the metrology targets simultaneously, different images using different portions of the diffracted radiation, and
the processor is configured to identify regions of interest in the detected images, each region of interest corresponding to a specific one of the metrology targets and to process pixel values within the regions of interest to obtain the measurement of asymmetry for each metrology target.

6. A substrate comprising:
a plurality of metrology targets formed by a lithographic process, each target comprising structures arranged to repeat with a spatial period in at least a first direction, the metrology targets comprising:
a plurality of overlay targets, at least some of the structures in each overlay target being replicated in first and second layers on the substrate and superimposed on one another and wherein each overlay target is formed with a positional offset between the layers that is a combination of both known and unknown components, the known components being different for different targets; and
a plurality of auxiliary targets, each auxiliary target comprising sub-structures of a size several times smaller than the spatial period, wherein each auxiliary target is formed in one of the layers and is formed with a positional offset between the sub-structures and structures that is a combination of both known and unknown components, the known components being different for different metrology targets.

7. The substrate as claimed in claim 6 , wherein two or more overlay targets having different known offsets between layers are formed in close proximity with two or more auxiliary targets having different positional offsets between the sub-structures and structures, so as to form a composite target, while other such composite targets are distributed across the substrate.

8. The substrate as claimed in claim 6 , wherein the auxiliary targets include at least a first pair of targets having different known positional offsets that are formed in the first layer and at least a second pair of targets having different positional offsets and that are formed in the second layer.

9. A patterning device for use in a lithographic process, the patterning device defining a pattern which when applied to a substrate will produce a substrate comprising:
a plurality of overlay targets, at least some of the structures in each overlay target being replicated in first and second layers on the substrate and superimposed on one another and wherein each overlay target is formed with a positional offset between the layers that is a combination of both known and unknown components, the known components being different for different targets; and
a plurality of auxiliary targets, each auxiliary target comprising sub-structures of a size several times smaller than the spatial period, wherein each auxiliary target is formed in one of the layers and is formed with a positional offset between the sub-structures and structures that is a combination of both known and unknown components, the known components being different for different targets.

10. A method of measuring a performance parameter of a lithographic process, the method comprising:
performing the lithographic process to produce structures forming a plurality of metrology targets on a substrate, at least two of the targets having a positional offset between structures and smaller sub-structures that is a combination of both known and unknown components, the known components of positional offset being different for different targets;
measuring, via the inspection apparatus, asymmetry in at least two of the auxiliary targets having different known components of positional offset between structures and smaller sub-structures within a layer on the substrate; and
calculating a measurement overlay performance parameter of the lithographic process for structures of the smaller sub-structures using the results of the asymmetry measurements of the at least two of the auxiliary targets.

11. The method as claimed in claim 10 , wherein:
the targets formed in the performing the lithographic process are auxiliary targets for at least two overlay targets, the overlay targets having different known components of positional offset between structures in first and second layers on the substrate, and
results of the asymmetry measurements made in the measuring are combined with measurements of asymmetry in the at least two overlay targets to obtain a measurement of an unknown component of the positional offset in the overlay target to obtain a representation of the overlay parameter of the lithographic process for structures of the smaller size.

12. The method as claimed in claim 11 , wherein in the measuring at least two auxiliary targets having different known components of positional offset are measured in each of the first and second layers.

13. The method as claimed in claim 10 , wherein:
the at least two of the targets are formed in the performing the lithographic process to have different known components of positional offset between interleaved populations of sub-structures within a layer on the substrate,
in a measurement of an overlay parameter of the lithographic process used to form the interl

Assignees

• Asml Netherlands Bv

Inventors

• Mathijssen Simon Gijsbert Josephus
• Hunsche Stefan
• Van Kraaij Markus Gerardus Martinus Maria

Classifications

• G03F7/70466

  Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature (stitching G03F7/70475) · CPC title

• G03F7/213 Primary

  Exposing with the same light pattern different positions of the same surface at the same time {(G03F7/70 takes precedence)} · CPC title

• G03F7/22

  Exposing sequentially with the same light pattern different positions of the same surface {(G03F7/70 takes precedence)} · CPC title

• G03F7/70616

  Monitoring the printed patterns · CPC title

• G03F7/70633 Primary

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title