Apparatus and method for production of SiC single crystal

Patent metadata

Field	Value
Publication number	US-9322112-B2
Application number	US-201113326638-A
Country	US
Kind code	B2
Filing date	Dec 15, 2011
Priority date	Dec 28, 2010
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

To suppress 3D or convex growth and ensure a high flatness, an apparatus for producing an SiC single crystal includes: a container which holds an SiC solution, a portion for maintaining the solution in the container at a suitable temperature, a shaft having a lower end part acting as a portion for holding an SiC seed crystal in planar contact with an overall back surface of a crystal growth face and acting as a portion for cooling the SiC seed crystal, and a portion of the holding shaft for enabling an SiC single crystal to continuously grow at the crystal growth face by maintaining the crystal growth face brought into contact with the solution, a lower end part of the shaft having a portion for obtaining a uniform in-plane temperature distribution of the crystal growth face brought into planar contact, and a method for the same.

First claim

The invention claimed is:

1. An apparatus for producing a SiC single crystal comprising:
a container which holds a SiC solution,
an induction coil for maintaining said SiC solution in said container at a suitable temperature,
a holding shaft which has a lower end part for holding a SiC seed crystal in a state in planar contact with an overall back surface of a crystal growth face and for cooling said SiC seed crystal, and
wherein a position of said holding shaft is controlled for enabling the SiC single crystal to continuously grow at said crystal growth face by maintaining said crystal growth face in a state brought into contact with said SiC solution,
wherein said holding shaft is provided with a supply channel and a return channel for a cooling fluid which extend to said lower end part through a body of said holding shaft along its length direction,
said lower end part of said holding shaft forms a hollow body surrounded by a bottom part which holds said SiC single crystal in planar contact with its outside and side walls which rise from peripheral edges of said bottom part and connect to said body of said holding shaft, so that said cooling fluid which is sprayed from said supply channel into said hollow body strikes said bottom part and cools said SiC single crystal through said bottom part and passes through said return channel to be discharged from said hollow body, and
said bottom part of said hollow body is reduced in thickness from the center part where said cooling fluid from said supply channel strikes toward the peripheral edges toward said return channel.

2. The apparatus for producing the SiC single crystal as set forth in claim 1 , wherein
a temperature leveling plate with a higher heat conductivity in a direction perpendicular to a growth direction of the SiC single crystal compared to that growth direction is interposed between said lower end part and said SiC seed crystal.

3. The apparatus for producing the SiC single crystal as set forth in claim 1 , which
covers an outer circumference of said holding shaft by a heat insulating material.

Assignees

• Ishii Tomokazu
• Sakamoto Hidemitsu
• Kusunoki Kazuhiko
• Kamei Kazuhito
• Toyota Motor Co Ltd

Inventors

• Ishii Tomokazu
• Sakamoto Hidemitsu
• Kusunoki Kazuhiko
• Kamei Kazuhito

Classifications

• C30B17/00

  Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) · CPC title

• C30B29/36 Primary

  Carbides · CPC title

• Y10T117/1068

  including heating or cooling details [e.g., shield configuration] · CPC title

• Y10T117/1088

  including heating or cooling details · CPC title