Film-forming manufacturing apparatus and method

Patent metadata

Field	Value
Publication number	US-9873941-B2
Application number	US-201514812130-A
Country	US
Kind code	B2
Filing date	Jul 29, 2015
Priority date	Aug 27, 2010
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.

First claim

What is claimed is:

1. A film-forming apparatus comprising:
a film-forming chamber;
a hollow liner provided in the film-forming chamber;
a susceptor provided in the film-forming chamber to place a substrate thereon;
an upper heater located between the liner and the inner wall of the film-forming chamber and located above the susceptor in order to heat the substrate from above;
a lower heater located below the susceptor in order to heat the substrate from below;
a reaction gas supply portion for supplying a reaction gas for forming a SiC film on the substrate;
a first inert gas supply portion that supplies a first inert gas into a space around the hollow liner;
a second inert gas supply portion that supplies a second inert gas into a space around the lower heater;
an inert gas discharge portion for discharging the second inert gas from a space around the lower heater; and
a gas discharge portion located at a position lower than a position of the susceptor in the film-forming chamber, the gas discharge portion discharging the reaction gas, the first inert gas, and the second inert gas outside the film-forming chamber.

2. The film-forming apparatus according to claim 1 , wherein the hollow liner is cylindrically-shaped.

3. The film-forming apparatus according to claim 1 , wherein the reaction gas supply portion is located in the upper part of the film-forming chamber.

4. The film-forming apparatus according to claim 1 , wherein the inert gas is argon gas.

Assignees

• Nuflare Technology Inc
• Toyota Motor Co Ltd

Inventors

• Ito Hideki
• Tsumori Toshiro
• Suzuki Kunihiko
• Tsuchida Hidekazu
• Kamata Isaho
• Ito Masahiko
• Naito Masami
• Fujibayashi Hiroaki
• Adachi Ayumu
• Nishikawa Koichi

Classifications

• C23C16/325 Primary

  Silicon carbide · CPC title

• C23C16/45557 Primary

  Pulsed pressure or control pressure · CPC title

• C23C16/455

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C16/458

  characterised by the method used for supporting substrates in the reaction chamber · CPC title