Film formation apparatus and film formation method

Patent metadata

Field	Value
Publication number	US-9518322-B2
Application number	US-201414473157-A
Country	US
Kind code	B2
Filing date	Aug 29, 2014
Priority date	Oct 2, 2013
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.

First claim

The invention claimed is:

1. A film formation apparatus comprising:
a film formation chamber performing film formation on a substrate;
a first cylindrical liner provided inside of a sidewall of the film formation chamber;
a second cylindrical liner provided inside of the sidewall of the film formation chamber, and between the first cylindrical liner and the sidewall of the film formation chamber, an upper end of the second cylindrical liner being connected to the sidewall of the film formation chamber;
a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the first cylindrical liner;
a first heater provided outside of the first cylindrical liner in the film formation chamber and heating the substrate from above;
a second heater heating the substrate from below;
a first shielding gas supply unit having a plurality of second gas ejection holes supplying a first shielding gas to an inside of the first cylindrical liner and supplying the first shielding gas to a position closer to the sidewall of the film formation chamber than a position of the first gas ejection hole; and
a second shielding gas supply unit having a plurality of third gas ejection holes supplying a second shielding gas to a position between the sidewall of the film formation chamber and the second cylindrical liner.

2. The apparatus of claim 1 , wherein the first shielding gas consists of at least one of a hydrogen gas, an argon gas, and a helium gas.

3. The apparatus of claim 1 , further comprising a gas switching unit, wherein the gas switching unit supplies an argon gas when a temperature within the film formation chamber Is increased, and supplies at least one of a hydrogen gas and a helium gas when inside of the film formation chamber is cooled.

4. The apparatus of claim 1 , further comprising a gas switching unit,
wherein the gas switching unit supplies an argon gas when a temperature within the film formation chamber Is increased, and supplies at least one of a hydrogen gas and a helium gas when inside of the film formation chamber is cooled; and
the first shielding gas consists of at least one of a hydrogen gas, an argon gas, and a helium as.

5. The apparatus of claim 1 , wherein the process-gas supply unit comprises a shower plate arranged horizontally and having a plurality of gas flow paths connected to a plurality of the first gas ejection holes.

6. The apparatus of claim 1 , wherein the process-gas supply unit supplies a gas including an SIC source gas or an etching gas.

7. The apparatus of claim 1 , wherein a horizontal position of the second gas ejection hole is between the first gas ejection hole and the liner.

8. The apparatus of claim 1 , wherein a horizontal position of the second gas ejection hole is closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.

9. The apparatus of claim 5 , wherein
the gas flow path comprises a plurality of first coupling parts supplying the process gas to the process-gas supply unit, and
the film formation apparatus further comprising:
a gas pipe having a plurality of second coupling parts for supplying the process gas to the gas flow path; and
a coupling pipe connecting a part of the first coupling parts to a part of the second coupling parts.

10. The apparatus of claim 9 wherein the second gas ejection hole supplies the shielding gas vertically downward.

11. The apparatus of claim 1 , further comprising a closing member closing at least a part of the first gas ejection holes.

12. The apparatus of claim 1 , further comprising a reflector provided below the process-gas supply unit and suppressing heat in the film formation chamber to be transmitted externally.

Assignees

• Nuflare Technology Inc

Inventors

• Ito Hideki
• Suzuki Kunihiko
• Tsuchida Hidekazu
• Kamata Isaho
• Ito Masahiko
• Fujibayashi Hiroaki
• Naito Masami
• Adachi Ayumu
• Nishikawa Koichi

Classifications

• C30B25/14

  Feed and outlet means for the gases; Modifying the flow of the reactive gases · CPC title

• C23C16/45519

  Inert gas curtains · CPC title

• C23C16/325

  Silicon carbide · CPC title

• C23C16/466 Primary

  using thermal contact gas · CPC title

• C23C16/45565

  Shower nozzles · CPC title