Film-forming apparatus and film-forming method

Patent metadata

Field	Value
Publication number	US-9735003-B2
Application number	US-201313850524-A
Country	US
Kind code	B2
Filing date	Mar 26, 2013
Priority date	Mar 29, 2012
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

A film-forming apparatus and film-forming method comprising, a chamber, a first gas supply unit supplying a reaction gas for a film-forming process to the chamber, a substrate-supporting portion supporting a substrate placed in the chamber, a heating unit heating the substrate from below the substrate-supporting portion, a rotary drum supporting the substrate-supporting portion on a top thereof, and including the heating unit disposed therein, a rotary shaft disposed in a lower part of the chamber, and rotating the rotary drum, a reflector reflecting heat from the heating unit, surrounding the rotary drum, and being disposed so as to have an upper end higher in height than an upper end of the substrate-supporting portion, and a second gas supply unit supplying a hydrogen gas or an inert gas between the rotary drum and the reflector.

First claim

What is claimed is:

1. A film-forming apparatus comprising:
a chamber;
a substrate-supporting portion configured to support a substrate placed in the chamber;
a first gas supply unit configured to supply a reaction gas for a film-forming process to the chamber, in which the reaction gas flow is from an upper side of the substrate supported by the substrate-supporting portion to the substrate;
a heating unit configured to heat the substrate from below the substrate-supporting portion;
a rotary drum configured to support the substrate-supporting portion on a top thereof, and including the heating unit disposed therein;
a rotary shaft disposed in a lower part of the chamber, and configured to rotate the rotary drum; and
a reflector disposed so as to surround the rotary drum and configured to reflect heat from the heating unit, wherein
the reflector is disposed so as to have a straight upper end at a position 1 mm to 12 mm higher in height than a top surface of the substrate so that the reaction gas rises once at the periphery of the substrate-supporting portion and passes over the upper end of the reflector such that a formed boundary layer above the substrate-supporting portion is thicker than the formed boundary layer above the substrate.

2. The film-forming apparatus according to claim 1 , further comprising:
a second gas supply unit configured to supply a hydrogen gas or an inert gas from a bottom of a clearance between the rotary drum and the reflector to a top of the clearance.

3. The film-forming apparatus according to claim 2 , further comprising:
a third gas supply unit configured to supply an etching gas to the chamber; and
a control unit configured to control the flow rate of the gas from the second gas supply unit when the etching gas is supplied from the third gas supply unit to the chamber lower than the flow rate thereof when the reaction gas is supplied from the first gas supply unit to the chamber.

4. The film-forming apparatus according to claim 1 , wherein the difference in height between the upper end of the substrate-supporting portion and the upper end of the reflector falls in a range from a value equal to the thickness of the boundary layer to a value of twice the thickness of the boundary layer, wherein the boundary layer is formed in the vicinity of the surface of the substrate-supporting portion and is a region where the concentration of the reaction gas varies.

5. The film-forming apparatus according to claim 1 , wherein the heating unit comprises a first heater heating the substrate and a second heater heating an outer peripheral portion of the substrate.

6. A film-forming apparatus comprising:
a chamber;
a substrate-supporting portion configured to support a substrate placed in the chamber;
a first gas supply unit configured to supply a reaction gas for a film-forming process to the chamber, in which the reaction gas flow is from an upper side of the substrate supported by the substrate-supporting portion to the substrate;
a heating unit configured to heat the substrate from below the substrate-supporting portion;
a rotary drum configured to support the substrate-supporting portion on a top thereof, and including the heating unit disposed therein;
a rotary shaft disposed in a lower part of the chamber, and rotating the rotary drum;
a reflector disposed so as to surround the rotary drum and configured to reflect heat from the heating unit; and
a raising and lowering unit configured to raise and lower at least one of the rotary drum and the reflector, wherein
the raising and lowering unit relatively raises the reflector so as to have a straight upper end position at a position 1 mm to 12 mm higher in height than a top surface of the substrate so that the reaction gas rises once at a periphery of the substrate-supporting portion and passes over the upper end of the reflector such that a formed boundary layer above the substrate-supporting portion is thicker than the formed boundary layer above the substrate.

7. The film-forming apparatus according to claim 6 , comprising:
a second gas supply unit configured to supply a hydrogen gas or an inert gas from a bottom of a clearance between the rotary drum and the reflector to a top of the clearance.

8. The film-forming apparatus according to claim 7 , wherein the raising and lowering unit performs a control to make an upper end of the reflector lower in height than an upper end of the substrate-supporting portion when the etching gas is supplied from the third gas supply unit.

9. The film-forming apparatus according to claim 7 , further comprising:
a third gas supply unit configured to supply an etching gas to the chamber; and
a control unit configured to control the flow rate of the gas from the second gas supply unit according to whether the reaction gas is supplied from the first gas supply unit to the chamber or the etching gas is supplied from the third gas supply unit to the chamber.

10. The film-forming apparatus according to claim 8 , wherein the difference in height between the upper end of the substrate-supporting portion and the upper end of the reflector falls in a range from a value equal to the thickness of the boundary layer to a value of twice the thickness of the boundary layer, wherein the boundary layer is formed in the vicinity of the surface of the substrate-supporting portion and is a region where the concentration of the reaction gas varies.

11. The film-forming apparatus according to claim 6 , wherein the heating unit comprises a first heater heating the substrate and a second heater heating an outer peripheral portion of the substrate.

Assignees

• Nuflare Technology Inc

Inventors

• Yamada Takumi
• Sato Yuusuke

Classifications

• H10P14/00 Primary

  Formation of materials, e.g. in the shape of layers or pillars · CPC title

• H01L21/02104 Primary

  Electricity · mapped topic

• C30B25/12

  Substrate holders or susceptors · CPC title

• C30B25/10 Primary

  Heating of the reaction chamber or the substrate · CPC title

• C30B25/14 Primary

  Feed and outlet means for the gases; Modifying the flow of the reactive gases · CPC title