Film-forming apparatus and film-forming method

Patent metadata

Field	Value
Publication number	US-9598792-B2
Application number	US-201213527198-A
Country	US
Kind code	B2
Filing date	Jun 19, 2012
Priority date	Jun 21, 2011
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

First claim

What is claimed is:

1. A film-forming apparatus comprising:
a film-forming chamber;
a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process;
a main-heater configured to heat a substrate placed inside the liner, from the bottom side;
a sub-heater cluster provided between the liner and the inner wall, apart from the innter wall and above an outer periphery of the suspector, the sub-heater cluster being configured to heat the substrate from the top side;
wherein the main-heater and the sub-heater cluster are resistive heaters;
wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater;
wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater;
wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

2. The film-forming apparatus according to claim 1 , wherein the main-heater has a disk-shaped in-heater;
a ring-shaped out-heater provided above the in-heater and at the position corresponding to the periphery of the substrate;
wherein each temperature of the in-heater and the out-heater are individually controlled.

3. The film-forming apparatus according to claim 1 , further compromising:
at least one other sub-heater for heating the liner at a lower output than the first sub-heater;
wherein the other sub-heater is provided above the second sub-heater, and the temperature of the other sub-heater is controlled independently of the first sub-heater and the second sub-heater.

4. The film-forming apparatus according to claim 2 , further comprising:
at least one other sub-heater for heating the liner at a lower output than the first sub-heater;
wherein the other sub-heater is provided above the second sub-heater, and the temperature of the other sub-heater is controlled independently of the first sub-heater and the second sub-heater.

5. A method for forming a film comprising:
placing a substrate on a susceptor in a liner provided between an inner wall of a film-forming chamber and a space for performing the film-forming process in the film-forming chamber;
heating the substrate to form a film onto the surface of the substrate;
wherein the substrate is heated by a main-heater from the bottom side, the substrate is heated by a first sub-heater from the top side, the first sub-heater is provided between the liner and the inner wall, apart from the inner wall and above an outer periphery of the susceptor;
wherein an output of the main-heater is controlled depending on the temperature of the substrate, and an output of the first sub-heater is controlled depending on the output of the main-heater; and
wherein the liner is heated by a second sub-heater at a lower output than the first sub-heater, the second sub-heater is provided between the liner and the inner wall above the first sub-heater.

6. A film-forming apparatus comprising:
a film-forming chamber;
a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process;
a main-heater configured to heat a substrate placed on a susceptor inside the liner, from the bottom side;
a sub-heater cluster provided between the liner and the inner wall, apart from the inner wall and above an outer periphery of the susceptor, the sub-heater cluster being configured to heat the substrate from the top side;
wherein the main-heater and the sub-heater cluster are resistive heaters;
wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater;
wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at the same output as the first sub-heater;
wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

7. The film-forming apparatus according to claim 6 , wherein the main-heater has a disk-shaped in-heater;
a ring-shaped out-heater provided above the in-heater and at the position corresponding to the periphery of the substrate;
wherein each temperature of the in-heater and the out-heater are individually controlled.

8. The film-forming apparatus according to claim 6 , further comprising:
at least one other sub-heater for heating the liner is at the same output as the first sub-heater;
wherein the other sub-heater is provided above the second sub-heater, and the temperature of the other sub-heater is controlled independently of the first sub-heater and the second sub-heater.

9. The film-forming apparatus according to claim 7 , further comprising:
at least one other sub-heater for heating the liner at the same output as the first sub-heater;
wherein the other sub-heater is provided above the second sub-heater, and the temperature of the other sub-heater is controlled independently of the first sub-heater and the second sub-heater.

10. A method for forming a film comprising:
placing a substrate on a susceptor in a liner provided between an inner wall of a film-forming chamber and a space for performing the film-forming process in the film-forming chamber;
heating the substrate to form a film onto the surface of the substrate;
wherein the substrate is heated by a main-heater from the bottom side, the substrate is heated by a first sub-heater from the top side, the first sub-heater is provided and between the liner and the inner wall, apart from the inner wall and above an outer periphery of the susceptor;
wherein an output of the main-heater is controlled depending on the temperature of the substrate, and an output of the first sub-heater is controlled depending on the output of the main-heater; and
wherein the liner is heated by a second sub-heater at a lower output than the first sub-heater, the second sub-heater is provided between the liner and the inner wall above the first sub-heater.

11. A film-forming apparatus comprising:
a film-forming chamber;
a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process;
a main-heater configured to heat a substrate on a susceptor placed inside the liner, from the bottom side;
a sub-heater cluster provided between the liner and the inner wall, apart from the inner wall and above an outer periphery of the susceptor, the sub-heater cluster being configured to heat the substrate from the top side;
wherein the main-heater and the sub-heater cluster are resistive heaters;
wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater;
wherein the first sub-heater heats the substrate in combination with the main-heater, the surface of the second sub-heater heats the liner at the same temperature, or lower temperature, than the surface of first sub-heater;
wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

12. The film-forming apparatus according to claim 11 , wherein the main-heater has a disk-shaped in-heater;
a ring-shaped out-heater provided above the in-heater and at the position corresponding to the periphery of the substrate;
wherein each temperature of the in-heater and the out-heater are individually controlled.

13. The film-forming appara

Assignees

• Suzuki Kunihiko
• Ito Hideki
• Ikeya Naohisa
• Tsuchida Hidekazu
• Kamata Isaho
• Ito Masahiko
• Naito Masami
• Fujibayashi Hiroaki
• Adachi Ayumu
• Nishikawa Koichi
• Nuflare Technology Inc
• Central Res Inst Electric Power Ind
• Denso Corp
• Toyota Motor Co Ltd

Inventors

• Suzuki Kunihiko
• Ito Hideki
• Ikeya Naohisa
• Tsuchida Hidekazu
• Kamata Isaho
• Ito Masahiko
• Naito Masami
• Fujibayashi Hiroaki
• Adachi Ayumu
• Nishikawa Koichi

Classifications

• C30B25/10 Primary

  Heating of the reaction chamber or the substrate · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title