Method for manufacturing power module substrate

Patent metadata

Field	Value
Publication number	US-9833855-B2
Application number	US-201414772913-A
Country	US
Kind code	B2
Filing date	Mar 17, 2014
Priority date	Mar 18, 2013
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

A method for manufacturing a power module substrate includes a first lamination step of laminating a ceramic substrate and a copper sheet through an active metal material and a filler metal having a melting point of 660° C. or lower on one surface side of the ceramic substrate; a second lamination step of laminating the ceramic substrate and an aluminum sheet through a bonding material on the other surface side of the ceramic substrate; and a heating treatment step of heating the ceramic substrate, the copper sheet, and the aluminum sheet laminated together, and the ceramic substrate and the copper sheet, and the ceramic sheet and the aluminum sheet are bonded at the same time.

First claim

The invention claimed is:

1. A method for manufacturing a power module substrate including a ceramic substrate, a circuit layer formed of a copper sheet bonded onto one surface of the ceramic substrate, and a metal layer formed of an aluminum sheet bonded onto the other surface of the ceramic substrate, the method comprising:
a first lamination step of laminating the copper sheet on the one surface of the ceramic substrate through an active metal material and a filler metal, the filler metal having a melting point of 600° C. or lower;
a second lamination step of laminating the aluminum sheet on the other surface of the ceramic substrate through a bonding material; and
a heating treatment step of heating the ceramic substrate, the copper sheet, and the aluminum sheet laminated together at a heating temperature of 650° C. or lower in a state of being pressurized in the lamination direction at 1 kgf/cm 2 to 35 kgf/cm 2 , wherein
the ceramic substrate and the copper sheet, and the ceramic sheet and the aluminum sheet are bonded at the same time, and
the filler metal does not come into direct contact with the copper sheet.

2. The method for manufacturing a power module substrate according to claim 1 , wherein
the filler metal is disposed on the ceramic substrate and the active metal material is disposed on the copper sheet in the first lamination step.

3. The method for manufacturing a power module substrate according to claim 1 , wherein
the filler metal is a brazing filler metal having a liquidus temperature of 450° C. or higher.

4. The method for manufacturing a power module substrate according to claim 3 , wherein
the brazing filler metal is any one selected from the group of a Cu—P—Sn—Ni-based brazing filler metal, a Cu—Sn-based brazing filler metal, and a Cu—Al-based brazing filler metal.

5. The method for manufacturing a power module substrate according to claim 1 , wherein
the filler metal is a solder material having a liquidus temperature of lower than 450° C.

6. The method for manufacturing a power module substrate according to claim 5 , wherein
the solder material is a Cu—P—Sn—Ni-based solder material or a Cu—Sn-based solder material.

7. The method for manufacturing a power module substrate according to claims 1 , wherein the active metal material is a Ti material.

8. The method for manufacturing a power module substrate according to claim 2 , wherein
the filler metal is a brazing filler metal having a liquidus temperature of 450° C. or higher.

9. The method for manufacturing a power module substrate according to claim 8 , wherein
the brazing filler metal is any one selected from the group of a Cu—P—Sn—Ni-based brazing filler metal, a Cu—Sn-based brazing filler metal, and a Cu-Al-based brazing filler metal.

10. The method for manufacturing a power module substrate according to claim 2 , wherein
the filler metal is a solder material having a liquidus temperature of lower than 450° C.

11. The method for manufacturing a power module substrate according to claim 10 , wherein
the solder material is a Cu—P—Sn—Ni-based solder material or a Cu—Sn-based solder material.

12. The method for manufacturing a power module substrate according to claim 1 , wherein the heating temperature in the heating treatment step is 600° C. or higher.

13. A method for manufacturing a power module substrate including a ceramic substrate, a circuit layer formed of a copper sheet bonded onto one surface of the ceramic substrate, and a metal layer formed of an aluminum sheet bonded onto the other surface of the ceramic substrate, the method comprising:
a first lamination step of laminating the copper sheet on the one surface of the ceramic substrate through an active metal material and a filler metal, the filler metal having a melting point of 600° C. or lower;
a second lamination step of laminating the aluminum sheet on the other surface of the ceramic substrate through a bonding material; and
a heating treatment step of heating the ceramic substrate, the copper sheet, and the aluminum sheet laminated together at a heating temperature of 650° C. or lower, wherein
the ceramic substrate and the copper sheet, and the ceramic sheet and the aluminum sheet are bonded at the same time;
wherein at the first lamination step of laminating the active metal material is disposed on the copper sheet, and the filler metal is disposed on the ceramic substrate;
the active metal material is selected from a group consisting of one or more active elements of Ti, Zr, Nb, and Hf, and
the filler metal does not come into direct contact with the copper sheet.

14. The method for manufacturing a power module substrate according to claim 13 ,
wherein the filler metal is a brazing filler metal having a liquidus temperature of 450° C. or higher.

15. The method for manufacturing a power module substrate according to claim 14 ,
wherein the brazing filler metal is any one selected from the group of a Cu—P—Sn—Ni-based brazing filler metal, a Cu—Sn-based brazing filler metal, and a Cu—Al-based brazing filler metal.

16. The method for manufacturing a power module substrate according to claim 13 ,
wherein the filler metal is a solder material having a liquidus temperature of lower than 450° C.

17. The method for manufacturing a power module substrate according to claim 16 ,
wherein the solder material is a Cu—P—Sn—Ni-based solder material or a Cu—Sn-based solder material.

18. The method for manufacturing a power module substrate according to claims 13 ,
wherein the active metal material is a Ti foil.

19. The method for manufacturing a power module substrate according to claim 13 ,
wherein the thickness of the active metal material is in a range of 1 μm to 20 μm.

20. The method for manufacturing a power module substrate according to claim 13 ,
wherein the brazing filler metal is any one selected from the group consisting of a Cu—P—Sn—Ni-based brazing filler metal, a Cu—Sn-based brazing filler metal, and a Cu—Al-based brazing filler metal and the bonding material is an Al—Si-based brazing filler metal.

Assignees

• Mitsubishi Materials Corp

Inventors

• Terasaki Nobuyuki
• Nagatomo Yoshiyuki

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W40/47

  by flowing liquids, e.g. forced water cooling · CPC title

• H10W70/05

  of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) · CPC title

• H10W70/02

  of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) · CPC title

• H10W40/255 Primary

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title