Bonding body, power module substrate, and heat-sink-attached power module substrate

Patent metadata

Field	Value
Publication number	US-2016035660-A1
Application number	US-201414775137-A
Country	US
Kind code	A1
Filing date	Mar 14, 2014
Priority date	Mar 14, 2013
Publication date	Feb 4, 2016
Grant date	—

Abstract

A bonding body includes: an aluminum member composed of aluminum; and a metal member composed of any one of copper, nickel, and silver, wherein the aluminum member and the metal member are bonded together. In a bonding interface between the aluminum member and the metal member, a Ti layer and an Al—Ti—Si layer are formed, the Ti layer being disposed at the metal member side in the bonding interface, and the Al—Ti—Si layer being disposed between the Ti layer the aluminum member and containing Si which is solid-solubilized into Al 3 Ti. The Al—Ti—Si layer includes: a first Al—Ti—Si layer formed at the Ti layer side; and a second Al—Ti—Si layer formed at the aluminum member side and a Si concentration of which is lower than a Si concentration of the first Al—Ti—Si layer.

First claim

1 . A bonding body comprising:
an aluminum member composed of aluminum; and a metal member composed of any one of copper, nickel, and silver, wherein the aluminum member and the metal member are bonded together, and wherein in a bonding portion between the aluminum member and the metal member, a Ti layer and an Al—Ti—Si layer are formed, the Ti layer being disposed at the metal member side; and the Al—Ti—Si layer being disposed between the Ti layer and the aluminum member and containing Si which is solid-solubilized into Al 3 Ti, and wherein the Al—Ti—Si layer includes: a first Al—Ti—Si layer formed at the Ti layer side; and a second Al—Ti—Si layer formed at the aluminum member side and a Si concentration of which is lower than a Si concentration of the first Al—Ti—Si layer.

2 . The boding body according to claim 1 , wherein
a Si concentration contained in the second Al—Ti—Si layer is 1 at % or more in the bonding body.

3 . A power module substrate comprising:
an insulation layer; and a circuit layer formed on one surface of the insulation layer, wherein the circuit layer is formed of the bonding body according to claim 1 , wherein the circuit layer includes: an Al layer formed of the aluminum member and formed on one surface of the insulation layer, and a metal member layer formed of the metal member and formed on one surface of the Al layer, wherein in a bonding portion between the Al layer and the metal member layer, a Ti layer and an Al—Ti—Si layer are formed, the Ti layer being disposed at the metal member layer side, and the Al—Ti—Si layer being disposed between the Ti layer and the Al layer and containing Si which is solid-solubilized into Al 3 Ti, and wherein the Al—Ti—Si layer includes: a first Al—Ti—Si layer formed at the Ti layer side; and a second Al—Ti—Si layer formed at the Al layer side and a Si concentration of which is lower than a Si concentration of the first Al—Ti—Si layer.

4 . The power module substrate according to claim 3 , further comprising:
a metal layer formed on the other surface of the insulation layer, wherein the metal layer is formed of the bonding body according to claim 1 , wherein the metal layer includes: an Al layer formed of the aluminum member and formed on the other surface of the insulation layer, and a metal member layer formed on a surface of the Al layer that is opposite to a surface of the Al layer on which the insulation layer is formed, and formed of the metal member, wherein in a bonding portion between the Al layer and the metal member layer, a Ti layer and an Al—Ti—Si layer are formed, the Ti layer being disposed at the metal member layer side, and the Al—Ti—Si layer being disposed between the Ti layer and the Al layer and containing Si which is solid-solubilized into Al 3 Ti, and wherein the Al—Ti—Si layer includes: a first Al—Ti—Si layer formed at the Ti layer side; and a second Al—Ti—Si layer formed at the Al layer side and a Si concentration of which is lower than a Si concentration of the first Al—Ti—Si layer.

5 . A power module substrate comprising:
an insulation layer; a circuit layer formed on one surface of the insulation layer; and a metal layer formed on the other surface of the insulation layer, wherein the metal layer is formed of the bonding body according to claim 1 , and wherein in a bonding portion between an Al layer formed of the aluminum member and a metal member layer formed of the metal member, a Ti layer and an Al—Ti—Si layer are formed, the Ti layer being disposed at the metal member layer side, and the Al—Ti—Si layer being disposed between the Ti layer and the Al layer and containing Si which is solid-solubilized into Al 3 Ti, and wherein the Al—Ti—Si layer includes: a first Al—Ti—Si layer formed at the Ti side; and a second Al—Ti—Si layer formed at the Al layer side and a Si concentration of which is lower than a Si concentration of the first Al—Ti—Si layer.

6 . A heat-sink-attached power module substrate comprising:
the power module substrate according to claim 3 , and a heat sink bonded to the metal layer.

7 . The heat-sink-attached power module substrate according to claim 6 , wherein
the metal layer and the heat sink are bonded together through a solder layer.

8 . A heat-sink-attached power module substrate comprising:
an insulation layer; and a circuit layer formed on one surface of the insulation layer, a metal layer formed on the other surface of the insulation layer, and a heat sink bonded on the metal layer, wherein the metal layer and the heat sink are formed of the bonding body according to claim 1 , wherein one of the metal layer and the heat sink of the bonding body is formed of aluminum, and the other of the metal layer and the heat sink of the bonding body is formed of any one of copper, nickel and silver, and wherein in a bonding portion between the metal layer and the heat sink, a Ti layer and an Al—Ti—Si layer are formed, the Ti layer being disposed at the metal layer side when the metal layer of the bonding body is formed of any one of copper, nickel and silver or being disposed at the heat sink side when the heat sink of the bonding body is formed of any one of copper, nickel and silver, and the Al—Ti—Si layer being disposed between the Ti layer and the metal layer when the metal layer of the bonding body is composed of aluminum or being disposed between the Ti layer and the heat sink when the heat sink of the bonding body is composed of aluminum, and containing Si which is solid-solubilized into Al 3 Ti, and wherein the Al—Ti—Si layer includes: a first Al—Ti—Si layer formed at the Ti side; and a second Al—Ti—Si layer formed at the metal layer side when the metal layer of the bonding body is composed of aluminum or formed at the heat sink side when the heat sink of the bonding body is composed of aluminum, and a Si concentration of which is lower than a Si concentration of the first Al—Ti—Si layer.

9 . A heat-sink-attached power module substrate comprising:
the power module substrate according to claim 5 , and a heat sink bonded to the metal layer.

10 . The heat-sink-attached power module substrate according to claim 9 , wherein the metal layer and the heat sink are bonded together through a solder layer.

Assignees

• Mitsubishi Materials Corp

Inventors

• Terasaki Nobuyuki
• Nagatomo Yoshiyuki

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W70/685

  comprising multiple insulating layers · CPC title

• H10W70/66

  Conductive materials thereof · CPC title

• H10W70/65

  Shapes or dispositions of interconnections · CPC title

• H10W40/258

  Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title