Package architecture utilizing wafer to wafer bonding
US-2024379487-A1 · Nov 14, 2024 · US
US2015055302A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015055302-A1 |
| Application number | US-201314388701-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 29, 2013 |
| Priority date | Mar 30, 2012 |
| Publication date | Feb 26, 2015 |
| Grant date | — |
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A power module substrate with a heatsink includes: a power module substrate provided with a ceramic substrate, a circuit layer and a metal layer; and a heatsink bonded to the metal layer via a solder layer and composed of copper or a copper alloy. The metal layer is formed by bonding an aluminum plate in which the content of Al is 99.0 to 99.85% by mass to the ceramic substrate, and the solder layer is formed of a solid-solubilized-hardening type solder material including Sn as a major component and a solid-solubilized element being solid-solubilized into a matrix of Sn.
Opening claim text (preview).
1 . A power module substrate with a heatsink comprises: a power module substrate including a ceramic substrate, a circuit layer arranged on a surface of the ceramic substrate, and a metal layer arranged on the other surface of the ceramic substrate and formed of aluminum; and a heatsink composed of copper or a copper alloy bonded to the other surface side of the metal layer via a solder layer, wherein the metal layer is formed by bonding an aluminum plate in which the content of Al is 99.0 to 99.85% by mass to the ceramic substrate, and the solder layer is formed of a solid-solubilized-hardening type solder material including Sn as a major component and a solid-solubilized element being solid-solubilized into a matrix of Sn. 2 . The power module substrate with the heatsink according to claim 1 , wherein the solder layer is formed of a solder material containing Sb as the solid-solubilized element. 3 . The power module substrate with the heatsink according to claim 1 , wherein the heatsink is composed of copper or a copper alloy having a tensile strength of 250 MPa or more. 4 . A power module substrate with a cooler comprising: the power module substrate with the heatsink according to claim 1 ; and a cooler laminated on the other surface side of the heatsink. 5 . A power module comprises: the power module substrate with the heatsink according to claim 1 ; and electronic parts mounted on the power module substrate with the heatsink. 6 . The power module substrate with the heatsink according to claim 2 , wherein the heatsink is composed of copper or a copper alloy having a tensile strength of 250 MPa or more.
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
Bolts or screws · CPC title
by flowing liquids, e.g. forced water cooling · CPC title
having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title
characterised by the heat transfer by conduction from the heat generating element to a dissipating body (arrangements for increasing/decreasing heat-transfer, e.g. fins details, F28F13/00) · CPC title
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