Method for manufacturing bonded body and method for manufacturing power-module substrate

Patent metadata

Field	Value
Publication number	US-2016013073-A1
Application number	US-201414775819-A
Country	US
Kind code	A1
Filing date	Mar 17, 2014
Priority date	Mar 18, 2013
Publication date	Jan 14, 2016
Grant date	—

Abstract

A method for manufacturing a power-module substrate includes a lamination step of laminating a ceramic member and a copper member through an active metal material and a filler metal having a melting point of 710° C. or lower, and a heating treatment step of heating the ceramic member and the copper member laminated together.

First claim

1 . A method for manufacturing a bonded body formed by bonding a ceramic member made of a ceramic member and a copper member made of copper or a copper alloy, the method comprising:
a lamination step of laminating the ceramic member and the copper member through an active metal material and a filler metal having a melting point of 710° C. or lower; and a heating treatment step of heating the ceramic member and the copper member laminated together to bond the ceramic member and the copper member.

2 . The method for manufacturing a bonded body according to claim 1 ,
wherein the filler metal is disposed on the ceramic member, and the active metal material is disposed on the copper member in the lamination step.

3 . The method for manufacturing a bonded body according to claim 1 ,
wherein the filler metal is a brazing filler metal having a liquidus temperature of 450° C. or higher.

4 . The method for manufacturing a bonded body according to claim 3 ,
wherein the brazing filler metal is any one selected from the group of a Cu—P-based brazing filler metal, a Cu—Sn-based brazing filler metal, and a Cu—Al-based brazing filler metal.

5 . The method for manufacturing a bonded body according to claim 1 ,
wherein the filler metal is a solder material having a liquidus temperature of lower than 450° C.

6 . The method for manufacturing a bonded body according to claim 5 ,
wherein the solder material is a Cu—P—Sn—Ni-based solder material or a Cu—Sn-based solder material.

7 . The method for manufacturing a bonded body according to claim 1 ,
wherein the active metal material is a Ti material.

8 . A method for manufacturing a power-module substrate having a ceramic substrate and a circuit layer made of copper or a copper alloy, the circuit layer being disposed on one surface of the ceramic substrate, the method comprising
bonding the circuit layer onto the one surface of the ceramic substrate using the method for manufacturing a bonded body according to claim 1 .

9 . A method for manufacturing a power-module substrate having a ceramic substrate, a circuit layer made of copper or a copper alloy, and a metal layer made of copper or a copper alloy, the circuit layer being disposed on one surface of the ceramic substrate, and the metal layer being disposed on the other surface of the ceramic substrate, the method comprising:
bonding the circuit layer and the metal layer onto both surfaces of the ceramic substrate respectively using the method for manufacturing a bonded body according to claim 1 .

10 . A method for manufacturing a power-module substrate having a ceramic substrate, a circuit layer made of copper or a copper alloy, and a metal layer made of aluminum or an aluminum alloy, the circuit layer being disposed on one surface of the ceramic substrate, and the metal layer being disposed on the other surface of the ceramic substrate, the method comprising:
bonding the circuit layer onto the one surface of the ceramic substrate using the method for manufacturing a bonded body according to claim 1 , and bonding the metal layer onto the other surface of the ceramic substrate after bonding the ceramic substrate and the circuit layer.

11 . The method for manufacturing a bonded body according to claim 2 ,
wherein the filler metal is a brazing filler metal having a liquidus temperature of 450° C. or higher.

12 . The method for manufacturing a bonded body according to claim 11 ,
wherein the brazing filler metal is any one selected from the group of a Cu—P-based brazing filler metal, a Cu—Sn-based brazing filler metal, and a Cu—Al-based brazing filler metal.

13 . The method for manufacturing a bonded body according to claim 2 ,
wherein the filler metal is a solder material having a liquidus temperature of lower than 450° C.

14 . The method for manufacturing a bonded body according to claim 13 ,
wherein the solder material is a Cu—P—Sn—Ni-based solder material or a Cu—Sn-based solder material.

Assignees

• Mitsubishi Materials Corp

Inventors

• Terasaki Nobuyuki
• Nagatomo Yoshiyuki

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W40/47

  by flowing liquids, e.g. forced water cooling · CPC title

• H10W40/255 Primary

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W70/093 Primary

  Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps · CPC title

• H01L21/4853 Primary

  Electricity · mapped topic