Apparatus for processing semiconductor wafers, in particular for carrying out a polymers removal process step

Patent metadata

Field	Value
Publication number	US-9786525-B2
Application number	US-201514952076-A
Country	US
Kind code	B2
Filing date	Nov 25, 2015
Priority date	Apr 15, 2011
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

An apparatus for processing semiconductor wafers includes at least a wet bench and an automatic handling system of a wafer carrier removably connected thereto. The wet bench includes a first processing tank, a second processing tank and a third processing tank, separated from one another, each processing tank being dedicated to a different chemical, as well as a special cleaning and drying tank for processing the automatic handling system when the wafer carrier has been removed.

First claim

The invention claimed is:

1. A method, comprising:
processing a semiconductor wafer carried by a wafer carrier of an automatic handling system that includes a connector removably coupled to the wafer carrier, the automatic handling system conveying the wafer carrier, the processing including processing the semiconductor wafer using a wet bench that includes a first processing tank, a second processing tank and a third processing tank, separated from one another, the first, second, and third processing tanks being configured to store first, second, and third chemicals, respectively;
decoupling the wafer carrier from the connector; and
cleaning and drying the connector using a cleaning and drying tank while the wafer carrier is decoupled from the connector.

2. The method of claim 1 , wherein cleaning and drying the connector includes providing a cleaning fluid and a drying blow to the automatic connector using nozzles of the cleaning and drying tank.

3. The method of claim 2 , wherein providing a cleaning fluid and a drying blow to the automatic connector using nozzles of the cleaning and drying tank includes spraying a flow of de-ionized water at the connector and blowing nitrogen at the connector.

4. The method of claim 1 , wherein the first, second and third processing tanks are provided with respective automatic lids, the method further comprising:
automatically opening a respective automatic lid of said first, second and third processing tanks during processing of the semiconductor wafer in the respective first, second and third processing tanks; and
automatically closing the respective automatic lid of said first, second and third processing tanks after processing of the semiconductor wafer in the respective first, second and third processing tanks.

5. The method of claim 1 , wherein said wet bench further comprises a protective cover, which protects an operator of the apparatus, during processing of the semiconductor wafers, said protective cover being at least partially transparent.

6. The method of claim 5 , wherein said protective cover is provided with an interlock which prevents any opening thereof during processing of the semiconductor wafers.

7. The method of claim 1 , wherein said first processing tank is filled with de-ionized water, said second processing tank is filled with isopropyl alcohol, and said third processing tank is filled with a hydroxylamine-based solvent, wherein processing the semiconductor wafer using a wet bench includes carrying out a polymer removal process.

8. The method of claim 7 , wherein said wet bench includes a separation bulkhead which isolates the third processing tank from the first and second processing tanks.

9. The method of claim 1 , further comprising:
providing the first, second and third processing tanks with respective drains for chemicals stored in the first, second and third processing tanks.

10. The method of claim 1 , wherein each of said first, second and third processing tanks include respective inlets and respective spray nozzles, the method further comprising:
receiving by the inlets of the first, second and third processing tanks the first, second, and third chemicals, respectively; and
filling, by the respective spray nozzles, the respective tank with the respective chemical.

11. The method of claim 10 , further comprising:
charging the second processing tank with isopropyl alcohol; and
recovering said isopropyl alcohol.

12. The method of claim 11 , further comprising:
recirculating the isopropyl alcohol in the second processing tank.

13. The method of claim 11 , further comprising:
charging the third processing tank with a hydroxylamine-based solvent; and
recovering said hydroxylamine-based solvent.

14. The method of claim 13 , further comprising:
heating the hydroxylamine-based solvent to a desired processing temperature.

15. The method of claim 1 , wherein said first processing tank comprises a rinse tank with an overflow mechanism, the method further comprising:
rinsing the semiconductor wafer in the rinse tank with de-ionized water.

16. A process, comprising:
uploading semiconductor wafers into a wafer carrier;
coupling the wafer carrier carrying semiconductor wafers to a connector of an automatic wafer handling system;
conveying the wafer carrier carrying semiconductor wafers to a first processing tank of a wet bench;
processing the wafer carrier carrying semiconductor wafers in the first processing tank;
conveying the wafer carrier carrying semiconductor wafers to a second processing tank of the wet bench;
processing the wafer carrier carrying semiconductor wafers in the second processing tank;
conveying the wafer carrier carrying semiconductor wafers to a third processing tank of the wet bench;
processing the wafer carrier carrying semiconductor wafers in the third processing tank;
downloading the semiconductor wafers from the wafer carrier;
decoupling the wafer carrier from the connector;
conveying the connector to a cleaning and drying tank; and
cleaning and drying the connector in the cleaning and drying tank while the wafer carrier is decoupled from the connector.

17. The method of claim 16 , wherein cleaning and drying the connector includes providing a cleaning fluid and a drying blow to the connector using nozzles of the cleaning and drying tank.

18. The method of claim 17 , wherein cleaning and drying the connector includes spraying a flow of de-ionized water at the connector and blowing nitrogen at the connector.

19. The method of claim 16 , wherein the first, second and third processing tanks are provided with respective automatic lids, the method further comprising:
automatically opening a respective automatic lid of said first, second and third processing tanks during processing of the semiconductor wafer in the respective first, second and third processing tanks; and
automatically closing the respective automatic lid of said first, second and third processing tanks after processing of the semiconductor wafer in the respective first, second and third processing tanks.

20. The method of claim 16 , wherein said first processing tank is filled with de-ionized water, said second processing tank is filled with isopropyl alcohol, and said third processing tank is filled with a hydroxylamine-based solvent, wherein processing the semiconductor wafer in the first, second and third processing tanks includes carrying out a polymer removal process.

21. A process, comprising:
uploading semiconductor wafers into a wafer carrier;
coupling the wafer carrier to a connector of an automatic wafer handling system configured to convey the wafer carrier;
dipping said wafer carrier into a hydroxylamine-based solvent of a first processing tank of a wet bench that also includes, a second processing tank and a third processing tank, separated from one another, and a cleaning and drying tank;
cleaning the wafers using isopropyl alcohol of said second processing tank;
rinsing the wafers using de-ionized water of said third processing tank;
downloading the wafers from said wafer carrier;
decoupling the wafer carrier from the connector; and
cleaning and drying the connector of the automatic handling system while the wafer carrier is decoupled from the connector.

22. A process according to claim 21 , wherein said cleaning and drying includes spraying a flow of de-ionized water at the connector and blowing nitrogen at the connector.

Assignees

• St Microelectronics Srl

Inventors

• Tenaglia Dario
• Cali Sebastiano

Classifications

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0406 Primary

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P72/32

  between different workstations · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title