Amorphous p-type oxide for a semiconductor device

Patent metadata

Field	Value
Publication number	US-9761673-B2
Application number	US-201214007705-A
Country	US
Kind code	B2
Filing date	Mar 28, 2012
Priority date	Mar 31, 2011
Publication date	Sep 12, 2017
Grant date	Sep 12, 2017

Abstract

A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu 2 O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu 2 O and x and y satisfy the following expressions: 0≦x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

First claim

The invention claimed is:

1. A p-type oxide, wherein the p-type oxide is amorphous and is represented by the following compositional formula:
x AO. y Cu 2 O
where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu 2 O, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, and wherein
in a case that A is any one of Mg, Ca and Ba or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, x and y satisfy each of the following expressions (i) and (ii):
0≦ x< 100; and  (i)

x+y= 100,  (ii)

in a case that A is Sr only, x and y satisfy each of the following expressions (iii) and (iv):
either 0≦ x< 50 or 50< x< 100; and  (iii)

x+y= 100  (iv).

2. A semiconductor device comprising:
an active layer,
wherein the active layer comprises a p-type oxide,
wherein the p-type oxide contained in the active layer is amorphous and is represented by the following compositional formula:
x AO. y Cu 2 O

where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu 2 O, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, and wherein
in a case that A is any one of Mg, Ca and Ba or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, x and y satisfy each of the following expressions (i) and (ii):
0≦ x< 100; and  (i)

x+y= 100,  (ii)

and in a case that A is Sr only, x and y satisfy each of the following expressions (iii) and (iv):
either 0≦ x< 50 or 50< x< 100; and  (iii)

x+y= 100  (iv).

3. The semiconductor device according to claim 2 , further comprising:
a first electrode; and
a second electrode,
wherein the semiconductor device is a diode where the active layer is formed between the first electrode and the second electrode.

4. The semiconductor device according to claim 2 , further comprising:
a gate electrode configured to apply gate voltage;
a source electrode and a drain electrode which are configured to extract electric current; and
a gate insulating layer,
wherein the semiconductor device is a field effect transistor where the active layer is formed between the source electrode and the drain electrode, and the gate insulating layer is formed between the gate electrode and the active layer.

Assignees

• Abe Yukiko
• Ueda Naoyuki
• Nakamura Yuki
• Matsumoto Shinji
• Sone Yuji
• Takada Mikiko
• Saotome Ryoichi
• Ricoh Co Ltd

Inventors

• Abe Yukiko
• Ueda Naoyuki
• Nakamura Yuki
• Matsumoto Shinji
• Sone Yuji
• Takada Mikiko
• Saotome Ryoichi

Classifications

• C01G3/02

  Oxides; Hydroxides · CPC title

• C01F5/06

  by thermal decomposition of magnesium compounds (calcining magnesite or dolomite C04B2/10) · CPC title

• G09G3/32

  semiconductive, e.g. using light-emitting diodes [LED] · CPC title

• C01P2002/02

  Amorphous compounds · CPC title

• C01F11/04

  by thermal decomposition · CPC title