Gas sensor and sensor device

Patent metadata

Field	Value
Publication number	US-9952175-B2
Application number	US-201615353028-A
Country	US
Kind code	B2
Filing date	Nov 16, 2016
Priority date	Jun 9, 2014
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.

First claim

What is claimed is:

1. A gas sensor comprising:
a first layer including copper (I) bromide; and
a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide,
wherein work function of the p-type semiconductor is smaller than work function of the copper (I) bromide,
wherein an area on a surface of the second layer in contact with detection-target gas is larger than an area of a surface of the first layer in contact with the detection-target gas, and
wherein the first layer and the second electrode form a Schottky barrier junction.

2. A gas sensor comprising:
a first layer including copper (I) bromide;
a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide; and
an electrode disposed on the first layer,
wherein the first layer and the electrode form a Schottky barrier junction,
work function of the p-type semiconductor is smaller than work function of the copper (I) bromide, and
wherein an area on a surface of the first layer in contact with detection-target gas is larger than an area of a surface of the second layer in contact with the detection-target gas.

3. The gas sensor according to claim 2 , further comprising a second electrode disposed on the second layer,
wherein the second layer and the second electrode form a Schottky barrier junction.

4. The gas sensor according to claim 1 ,
wherein the p-type semiconductor is Ag 2 O, Cu 2 S, Cu 2 O, Ge, InP, Si, GaAs, SiC, or GaN.

5. A sensor device comprising:
the gas sensor according to claim 1 ; and
a unit that is connected to the gas sensor and is configured to detect a change in potential difference of the gas sensor.

6. The sensor device according to claim 5 ,
wherein the unit configured to detect a change in potential difference of the gas sensor is a field-effect transistor.

7. The gas sensor according to claim 2 ,
wherein the p-type semiconductor is Ag 2 O, Cu 2 S, Cu 2 O, Ge, InP, Si, GaAs, SiC, or GaN.

8. A sensor device comprising:
the gas sensor according to claim 2 ; and
a unit that is connected to the gas sensor and is configured to detect a change in potential difference of the gas sensor.

9. The sensor device according to claim 8 ,
wherein the unit configured to detect a change in potential difference of the gas sensor is a field-effect transistor.

Assignees

• Fujitsu Ltd

Inventors

• Momose Satoru
• Tsuboi Osamu
• Soga Ikuo

Classifications

• G01N27/4141 Primary

  specially adapted for gases · CPC title

• H01L29/20

  Electricity · mapped topic

• G01N33/0054

  Ammonia · CPC title

• H01L29/242

  Electricity · mapped topic

• H01L29/16

  Electricity · mapped topic