Silicon carbide-based combined temperature-pressure micro-electro-mechanical system (mems) sensor chip and preparation method thereof
US-2022146352-A1 · May 12, 2022 · US
US9726561B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9726561-B2 |
| Application number | US-201414266281-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 30, 2014 |
| Priority date | May 20, 2013 |
| Publication date | Aug 8, 2017 |
| Grant date | Aug 8, 2017 |
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A differential pressure sensor comprises a cavity having a base including a base electrode and a membrane suspended above the base which includes a membrane electrode, wherein the first membrane is sealed with the cavity defined beneath the first membrane. A first pressure input port is coupled to the space above the sealed first membrane. A capacitive read out system is used to measure the capacitance between the base electrode and membrane electrode. An interconnecting channel is between the cavity and a second pressure input port, so that the sensor is responsive to the differential pressure applied to opposite sides of the membrane by the two input ports.
Opening claim text (preview).
The invention claimed is: 1. A differential pressure sensor, comprising: a cavity having a base including a base electrode and a first membrane suspended above the base which includes a membrane electrode, wherein the first membrane is sealed with the first membrane; a first pressure input port coupled to the space above the sealed first membrane; a capacitive read out system for measuring the capacitance between the base electrode and membrane electrode; an interconnecting channel between the cavity and a second pressure input port; and a second cavity to the side of the cavity, with the cavity and the second cavity interconnected by the interconnection channel, wherein the second cavity comprises a second membrane which has at least one opening, wherein the at least one opening is coupled to the second pressure input port, wherein the second cavity has a base including a second base electrode and the second membrane includes a second membrane electrode, and wherein the capacitive read out system is for measuring the capacitance between the base electrode and membrane electrode and for measuring the capacitance between the second base electrode and the second membrane electrode. 2. A sensor as claimed in claim 1 , wherein the first pressure input port is above the location of the cavity. 3. A sensor as claimed in claim 1 , wherein the second membrane has a plurality of openings. 4. A sensor as claimed in claim 3 or 1 , wherein the plan view area of the cavity is larger than the plan view area of the second cavity. 5. A sensor as claimed in claim 1 , wherein the second pressure input port is above the location of the second cavity. 6. A sensor as claimed in claim 1 , wherein the plan view area and shape of the cavity is the same as the plan view area and shape of the second cavity. 7. A sensor arrangement, comprising: an integrated circuit; and a sensor as claimed in one of claim 2 or 3 - 6 provided over the integrated circuit. 8. An arrangement as claimed in claim 7 , wherein the integrated circuit comprises a CMOS circuit, and has a top metal layer, wherein the base electrode of the cavity connects to the top metal layer through vias to form an electrical connection to the base electrode. 9. An arrangement as claimed in claim 8 , wherein the membrane electrode of the cavity connects to the top metal layer through vias to form an electrical connection to the membrane electrode. 10. An arrangement as claimed in claim 7 , wherein a sealing layer is provided over the membrane of the cavity, and a port arrangement is provided over the sealing arrangement, wherein the port arrangement comprises a lid having a recess which sits over the first cavity area, and the first pressure input port is coupled to the recess. 11. An arrangement as claimed in claim 10 , wherein the lid has a second recess which sits over the second cavity area, and the second pressure input port is coupled to the second recess. 12. An arrangement as claimed in claim 11 , wherein the lid is constructed out of glass.
with temperature compensating means (non electric temperature compensating means G01L19/04) · CPC title
Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation · CPC title
using a semiconductive diaphragm · CPC title
Details about the mounting of the sensor to support or covering means · CPC title
Non square semiconductive diaphragm · CPC title
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