Capacitive pressure sensors and other devices having a suspended membrane and having rounded corners at an anchor edge

Patent metadata

Field	Value
Publication number	US-11248976-B2
Application number	US-201816758680-A
Country	US
Kind code	B2
Filing date	Nov 16, 2018
Priority date	Nov 17, 2017
Publication date	Feb 15, 2022
Grant date	Feb 15, 2022

Abstract

Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first electrode;
a cavity over the first electrode; and
a second electrode comprising:
a suspended membrane over the cavity; and
electrically conductive anchor trenches laterally surrounding the cavity,
wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.

2. The semiconductor device of claim 1 , wherein the rounded corners of the outer anchor trench have a radius of at least 40 pm.

3. The semiconductor device of claim 1 , wherein the inner anchor trench has right-angles corners.

4. The semiconductor device of claim 1 , wherein the inner anchor trench has rounded corners, and wherein the rounded corners of the outer anchor trench have a radius at least twice as large as a radius of the rounded corners of the inner anchor trench.

5. The semiconductor device of claim 1 , wherein the rounded corners of the outer anchor trench have a radius of at least 5 pm.

6. The semiconductor device of claim 1 , wherein the electrically conductive anchor trenches further include one or more intermediate anchor trenches disposed between the inner and outer anchor trenches.

7. The semiconductor device of claim 6 , wherein one or more of the intermediate anchor trenches has rounded corners.

8. The semiconductor device of claim 7 , wherein an oxide support layer separates adjacent ones of the electrically conductive anchor trenches from one another.

9. The semiconductor device of claim 1 , wherein the suspended membrane has a rectangular shape.

10. The semiconductor device of claim 1 , wherein each of the suspended membrane and the anchor trenches has a non-rectangular shape.

11. The semiconductor device of claim 1 , wherein the suspended membrane is composed of tungsten.

12. A semiconductor device comprising:
an integrated circuit; and
a capacitive pressure sensor disposed over and electrically connected to the integrated circuit, the capacitive pressure sensor comprising:
a first electrode;
a cavity over the first electrode; and
a second electrode comprising:
a suspended membrane over the cavity; and
electrically conductive anchor trenches laterally surrounding the cavity,
wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.

13. The semiconductor device of claim 12 , wherein the rounded corners of the outer anchor trench have a radius of at least 40 pm.

14. The semiconductor device of claim 12 , wherein the inner anchor trench has substantially right-angles corners.

15. The semiconductor device of claim 12 , wherein the inner anchor trench has rounded corners, and wherein the rounded corners of the outer anchor trench have a radius at least twice as large as a radius of the rounded corners of the inner anchor trench.

16. The semiconductor device of claim 12 , wherein the rounded corners of the outer anchor trench have a radius of at least 5 pm.

17. The semiconductor device of claim 12 , wherein the electrically conductive anchor trenches further include one or more intermediate anchor trenches disposed between the inner and outer anchor trenches.

18. The semiconductor device of claim 17 , wherein one or more of the intermediate anchor trenches has rounded corners.

19. The semiconductor device of claim 18 , wherein an oxide support layer separates adjacent ones of the electrically conductive anchor trenches from one another.

20. The semiconductor device of claim 12 , wherein the suspended membrane has a rectangular shape.

21. The semiconductor device of claim 12 , wherein each of the suspended membrane and the anchor trenches has a non-rectangular shape.

22. The semiconductor device of claim 12 , wherein the integrated circuit includes a CMOS read-out circuit.

23. The semiconductor device of claim 22 , wherein the CMOS read-out circuit includes a passivation layer, and wherein the capacitive pressure sensor is disposed on the passivation layer.

24. The semiconductor device of claim 12 , wherein the suspended membrane is composed of tungsten.

Assignees

• Sciosense Bv

Inventors

• Besling Willem Frederik Adrianus
• Van Der Avoort Casper
• Pijnenburg Remco Henricus Wilhelmus
• Wunnicke Olaf
• Siegert Jörg
• Faes Alessandro

Classifications

• G01L9/0073 Primary

  using a semiconductive diaphragm · CPC title

• G01L9/005 Primary

  Non square semiconductive diaphragm · CPC title

• G01L19/0061

  Electrical connection means · CPC title

• G01L9/12

  by making use of variations in capacitance {, i.e. electric circuits therefor} · CPC title