Semiconductor pressure sensor

Patent metadata

Field	Value
Publication number	US-10239747-B2
Application number	US-201715430813-A
Country	US
Kind code	B2
Filing date	Feb 13, 2017
Priority date	Jun 1, 2016
Publication date	Mar 26, 2019
Grant date	Mar 26, 2019

Abstract

A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.

First claim

What is claimed is:

1. A semiconductor pressure sensor, comprising:
a fixed electrode placed at a principal surface of a semiconductor substrate; and
a diaphragm movable through an air gap in a thickness direction of said semiconductor substrate at least in an area where said diaphragm is opposed to said fixed electrode,
said diaphragm including:
a movable electrode;
a first insulation film placed closer to said air gap with respect to said movable electrode;
a second insulation film placed opposite to said air gap with respect to said movable electrode, said second insulation film being of a same film type as said first insulation film; and
a shield film that sandwiches said second insulation film with said movable electrode, wherein
said movable electrode includes a first polysilicon layer having a compressive internal stress, a second polysilicon layer having a tensile internal stress, and a third polysilicon layer having a compressive internal stress, said first polysilicon layer, said second polysilicon layer, and said third polysilicon layer being laminated in said thickness direction in a stated order from said fixed electrode, and
said shield film is a fourth polysilicon layer having a compressive internal stress.

2. The semiconductor pressure sensor according to claim 1 , further comprising
a third insulation film surrounding said fixed electrode at said principal surface of said semiconductor substrate,
wherein said diaphragm has, at ends of said diaphragm in a cross-section, a fixed portion that is fixed to said third insulation film from an opposite side of said semiconductor substrate.

3. The semiconductor pressure sensor according to claim 1 ,
wherein said air gap is placed between said diaphragm and a principal surface surrounding said fixed electrode, said surrounding principal surface being included in said principal surface of said semiconductor substrate,
said air gap is meandering in said thickness direction at least around said fixed electrode, and
said diaphragm is movable in said thickness direction in an area where said diaphragm is opposed to said surrounding principal surface.

4. A semiconductor pressure sensor, comprising:
a fixed electrode placed at a principal surface of a semiconductor substrate; and
a diaphragm movable through an air gap in a thickness direction of said semiconductor substrate at least in an area where said diaphragm is opposed to said fixed electrode,
said diaphragm including:
a movable electrode;
a first insulation film placed closer to said air gap with respect to said movable electrode;
a second insulation film placed opposite to said air gap with respect to said movable electrode, said second insulation film being of a same film type as said first insulation film; and
a shield film that sandwiches said second insulation film with said movable electrode, wherein
said movable electrode includes a first polysilicon layer having a compressive internal stress and a second polysilicon layer having a tensile internal stress, said first polysilicon layer and said second polysilicon layer being laminated in said thickness direction in a stated order from said fixed electrode, and
said shield film is a fourth polysilicon layer having a compressive internal stress.

5. The semiconductor pressure sensor according to claim 4 , further comprising
a third insulation film surrounding said fixed electrode at said principal surface of said semiconductor substrate,
wherein said diaphragm has, at ends of said diaphragm in a cross-section, a fixed portion that is fixed to said third insulation film from an opposite side of said semiconductor substrate.

6. The semiconductor pressure sensor according to claim 4 ,
wherein said air gap is placed between said diaphragm and a principal surface surrounding said fixed electrode, said surrounding principal surface being included in said principal surface of said semiconductor substrate,
said air gap is meandering in said thickness direction at least around said fixed electrode, and
said diaphragm is movable in said thickness direction in an area where said diaphragm is opposed to said surrounding principal surface.

Assignees

• Mitsubishi Electric Corp

Inventors

• Sato Kimitoshi

Classifications

• G01L9/0048

  Details about the mounting of the diaphragm to its support or about the diaphragm edges, e.g. notches, round shapes for stress relief · CPC title

• B81B2201/0264

  Pressure sensors · CPC title

• B81B3/0072 Primary

  For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers · CPC title

• G01L19/04

  Means for compensating for effects of changes of temperature {, i.e. other than electric compensation} · CPC title

• B81B2203/0127

  Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function · CPC title