Substrate backside texturing

Patent metadata

Field	Value
Publication number	US-9711419-B2
Application number	US-201514833044-A
Country	US
Kind code	B2
Filing date	Aug 22, 2015
Priority date	Aug 6, 2014
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

Embodiments described relate to a method and apparatus for reducing lithographic distortion. A backside of a semiconductor substrate may be texturized. Then a lithographic process may be performed on the semiconductor substrate having the texturized backside.

First claim

What is claimed is:

1. A method for adjusting backside texturing of a semiconductor substrate that is processed on a photolithography tool, comprising:
determining one or more contact areas on the photolithography tool at which the backside of the semiconductor substrate contacts the photolithography tool;
determining a backside surface texturing for the semiconductor substrate that is based, at least in part, on:
a frequency of backside features of the semiconductor substrate at one or more portions of the semiconductor substrate,
an amplitude of the backside features at the one or more portions of the semiconductor substrate, or
a size of the one or more contact areas;

determining a target backside surface texturing that reduces the coefficient of friction between the backside of the substrate and the one or more contact areas of the photolithographic tool at which the backside of the substrate contacts the photolithographic tool based on sizes of the one or more contact areas; and
processing the backside of the semiconductor substrate to obtain the target backside surface texturing.

2. The method of claim 1 , wherein the processed backside contacts each of the one or more contact area at a frequency of no more than 70 contacts per millimeter.

3. The method of claim 2 , wherein the amplitude of the backside features varies by no more than 10 nm with respect to each other.

4. The method of claim 1 , wherein the processing comprises ablating the backside features with a laser beam.

5. The method of claim 4 , wherein the laser beam comprises a wavelength between 300 nm and 1400 nm.

6. The method of claim 5 , wherein the laser beam comprises a dose of about 150 J/cm 2 .

7. The method of claim 6 , wherein the processing comprises a laser beam overlap of no more than 10 μm.

8. The method of claim 6 , wherein the processing comprises removing one or more films and/or a material of the backside with at least one chemical agent in conjunction with the polishing or laser treatment.

9. The method of claim 1 , wherein determining the target backside surface texturing is further based on the determined backside surface texturing.

10. A method of reducing lithographic distortion comprising:
determining a target backside surface texturing that reduces a coefficient of friction between a backside of a semiconductor substrate and one or more contact areas of a lithographic tool at which the backside of the semiconductor substrate contacts the photolithographic tool based on sizes of the one or more contact areas;
texturizing a backside of the semiconductor substrate according to the determined target backside surface texturing; and
performing a lithographic process on the semiconductor substrate having the texturized backside with the lithographic tool which supports the substrate at the one or more contact areas.

11. The method of claim 10 , wherein the texturizing comprises applying a pulsed laser to one or more films from a backside of the semiconductor substrate.

12. The method of claim 11 , wherein the pulsed laser comprises a wavelength between 300 nm and 1400 nm.

13. The method of claim 10 , wherein the texturized backside contacts each of the one or more contact areas at a frequency of 5-10 contacts per micron.

14. The method of claim 10 , wherein the texturized backside has features that vary in distance in a direction perpendicular to a surface of the semiconductor substrate by no more than 10 nm.

15. The method of claim 10 , further comprising:
producing an image on a front surface of the substrate;
measuring variations in the image from a reference; and
producing a modified image on a front surface of a subsequent substrate that varies from the image in accordance with the variations.

16. The method of claim 10 , wherein determining the target backside surface texturing is further based on a preexisting backside surface texturing.

Assignees

• Tokyo Electron Ltd

Inventors

• Fonseca Carlos A
• Rathsack Benjamen M
• Smith Jeffrey
• Devilliers Anton J
• Huli Lior
• Kodama Teruhiko
• Hooge Joshua S

Classifications

• H10P76/2041 Primary

  Photolithographic processes · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H01L21/30625

  Electricity · mapped topic