Simultaneously measuring degradation in multiple FETs

Patent metadata

Field	Value
Publication number	US-9702924-B2
Application number	US-201514716070-A
Country	US
Kind code	B2
Filing date	May 19, 2015
Priority date	May 19, 2015
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A structure and method of testing degradation of semiconductor devices by stressing an array of several semiconductor devices at the same time and measuring the resulting degradation separately for each individual device to obtain an estimate of its expected lifetime is provided. The devices may be subjected to stress that is either in a pulsed state or in a DC state. An on-chip pulse generator may be used for stressing in the pulsed state.

First claim

What is claimed is:

1. A method comprising:
measuring a first set of values of a current Idd passing through each individual field effect transistor (FET) in a plurality of FETs, the plurality of FETs comprising an array of devices under test (DUT) located in a single testing circuit;
simultaneously applying a stress voltage in parallel to one of drains and sources of all of the plurality of FETs and at least one signal to gates of all of the plurality of FETs, wherein the stress voltage and the at least one signal comprise a series of short periodic pulses applied during a low duty cycle;
turning the at least one signal off in the gates of all of the plurality of FETs;
turning on individual gates of individual FETs of the plurality of FETs one by one in succession such that the current Idd is conducted through each individual FET;
measuring a second set of values of the current Idd through each individual FET in the plurality of FETs at a time when the gates of each individual FET are turned on; and
comparing the first set of values of the current Idd to the second set of values of the current Idd to determine whether the second set of values is different from the first set of values, wherein a difference between the first set of values and the second set of values is an indication of device degradation in each individual FET of the plurality of FETs.

2. The method of claim 1 , wherein the at least one signal comprises a static DC signal.

3. The method of claim 1 , wherein the at least one signal comprises a pulsed signal generated by a finite state machine.

4. The method of claim 1 , wherein the at least one signal comprises a pulse signal generated by an on-chip pulse generator.

5. The method of claim 1 , wherein the simultaneously applying the stress voltage is achieved by setting a scan chain to propagate all zeros, and setting a pulse signal and a clock signal to apply one of a pulse signal and a static DC signal to all the gates of the plurality of FETs for a duration of time.

6. The method of claim 1 , further comprising:
reducing a leakage current of any FET in the plurality of FETs not selected for measurement by maintaining a gate-to-source voltage of non-selected FETs at a negative value during the measuring of the second set of values of the current Idd through the selected FETs.

7. The method of claim 1 , further comprising:
reducing a leakage current of any FET in the plurality of FETs not selected for measurement by maintaining a gate-to-source voltage of non-selected FETs at a negative value during the measuring of the second set of values of the current Idd through the selected FETs, and during measuring of a third set of values of a voltage through the selected FETs.

8. The method of claim 1 , wherein the at least one signal comprises a short pulse received from a low frequency input clock.

9. The method of claim 1 , wherein a low frequency input clock directly drives the gates of the plurality of FETs.

10. The method of claim 1 , wherein the plurality of FETs are connected to a single variable load FET whose gate voltage is adjustable.

11. The method of claim 1 , wherein the plurality of FETs are connected to a fixed resistor.

12. The method of claim 1 , further comprising:
repeating steps of claim 1 until the second set of values of the current Idd through the individual FETs between successive measurements of the second set of values of the current Idd through the individual FETs are substantially equal.

13. An apparatus for testing a plurality of field effect transistors (FETs), comprising:
a current measuring device configured to measure a first set of values of a current Idd through each individual FET in a plurality of FETs, the plurality of FETs comprising an array of devices under test (DUT) located in a single testing circuit;
a voltage source configured to apply a stress voltage in parallel to one of drains and sources of all of the plurality of FETs simultaneously with a pulsed signal source configured to apply and turn off at least one signal to gates of all of the plurality of FETs, wherein the stress voltage and the at least one signal comprise a series of short periodic pulses; and
a scan chain configured to turn on individual gates of individuals FETs of the plurality of FETs one by one in succession such that the current Idd is conducted through each individual FET,
wherein the current measuring device is configured to measure a second set of values of the current Idd through individual FETs at a time when the individual gates of the individual FETs are turned on, wherein a difference between the first set of values of current Idd and the second set of values of current Idd is an indication of device degradation in each individual FET of the plurality of FETs.

14. The apparatus of claim 13 , wherein the pulsed signal source comprises a static DC signal source.

15. The apparatus of claim 13 , wherein the pulsed signal source comprises a finite state machine.

16. The apparatus of claim 13 , wherein the pulsed signal source comprises an on-chip pulse generator.

17. The apparatus of claim 13 , wherein the pulsed signal source comprises a low frequency input clock generating a short pulse.

18. The apparatus of claim 13 , wherein a low frequency input clock is configured to directly drive the gates of the plurality of FETs.

Assignees

• IBM

Inventors

• Balakrishnan Karthik
• Jenkins Keith A
• Vezyrtzis Christos

Classifications

• G01R31/2623 Primary

  for measuring break-down voltage therefor · CPC title

• G01R31/2621 Primary

  for testing field effect transistors, i.e. FET's · CPC title

• G01R31/3008

  Quiescent current [IDDQ] test or leakage current test · CPC title

• G01R31/2642

  Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests · CPC title