SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
US-2017327968-A1 · Nov 16, 2017 · US
Method for producing an n-type SiC single crystal from a Si—C solution comprising a nitride
US9702057B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9702057-B2 |
| Application number | US-201314650664-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 1, 2013 |
| Priority date | Dec 28, 2012 |
| Publication date | Jul 11, 2017 |
| Grant date | Jul 11, 2017 |
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Abstract
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Provided is a method for producing an n-type SiC single crystal, whereby it is possible to grow an n-type SiC single crystal having a low resistivity at a high speed. A method for producing an n-type SiC single crystal by bringing a SiC seed crystal substrate into contact with a Si—C solution having such a temperature gradient that the temperature gradually decreases from the inside toward the surface, thereby achieving the crystal growth of the n-type SiC single crystal. The method involves adding a nitride to a raw material for forming the Si—C solution or to the Si—C solution.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for producing an n-type SiC single crystal wherein a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient in which the temperature falls from the interior toward the surface, to cause crystal growth of an n-type SiC single crystal, the method comprising adding a nitride to a starting material used to form the Si—C solution, or to the Si—C solution, wherein the nitride is at least one selected from the group consisting of chromium nitride, germanium nitride, and nickel nitride. 2. The method according to claim 1 , wherein the amount of nitride added is 0.02 wt % or greater in terms of nitrogen atoms, based on the total amount of the nitrogen-containing Si—C solution. 3. The method according to claim 1 , wherein the surface temperature of the Si—C solution is 1800 to 2200° C. 4. The method according to claim 2 , wherein the surface temperature of the Si—C solution is 1800 to 2200° C.
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Carbides · CPC title
Heating of the reaction chamber or the substrate · CPC title
Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) · CPC title
- C30B19/062Primary
Vertical dipping system · CPC title
Boots or containers · CPC title
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- What does patent US9702057B2 cover?
- Provided is a method for producing an n-type SiC single crystal, whereby it is possible to grow an n-type SiC single crystal having a low resistivity at a high speed. A method for producing an n-type SiC single crystal by bringing a SiC seed crystal substrate into contact with a Si—C solution having such a temperature gradient that the temperature gradually decreases from the inside toward the …
- Who is the assignee on this patent?
- Shirai Takayuki, Toyota Motor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B19/062. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jul 11 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).