Method for patterning a graphene layer and method for manufacturing a display substrate

Patent metadata

Field	Value
Publication number	US-9633899-B2
Application number	US-201414513324-A
Country	US
Kind code	B2
Filing date	Oct 14, 2014
Priority date	Jun 10, 2014
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

The invention provides a method for patterning a graphene layer and a method for manufacturing a display substrate. The method for patterning a graphene layer comprises: forming an isolation layer on a graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned photoresist layer to form a patterned graphene layer; and removing the patterned isolation layer. In the method of the invention, the unfavorable condition of the prior art may be avoided that a graphene film sloughs off or a photoresist remains on a graphene film when a photoresist material is peeled off, and the product yield can be improved in the case that the production cost is controlled.

First claim

What is claimed is:

1. A method for patterning a graphene layer, comprising:
forming an isolation layer on the graphene layer;
forming a photoresist layer on the isolation layer;
patterning the photoresist layer;
etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer;
etching the graphene layer according to the patterned isolation layer to form a patterned graphene layer; and
removing the patterned isolation layer,
wherein the method further comprises:
forming the graphene layer with a resin base before forming the isolation layer on the graphene layer; and
forming a resin film with the patterned graphene layer after removing the patterned isolation layer.

2. The method according to claim 1 , further comprises:
peeling off the patterned photoresist layer after etching the isolation layer according to the patterned photoresist layer to form the patterned isolation layer.

3. The method according to claim 1 , further comprises:
transferring the patterned graphene layer on the resin film to a substrate via a transfer process; and
removing the resin base at the resin film.

4. The method according to claim 1 , wherein the step forming the graphene layer with the resin base comprises:
spin-coating a single-layer or multiple layers of water-soluble graphene material on the resin base to form the graphene layer.

5. The method according to claim 1 , wherein the step of forming the graphene layer with the resin base comprises:
depositing a graphene material on a metal base to form the graphene layer;
spin-coating a resin material on the graphene layer to form the resin base; and
etching and removing the metal base.

6. The method according to claim 5 , wherein the material of the metal base includes any one of copper, nickel or copper-nickel alloy.

7. The method according to claim 1 , wherein the isolation layer is formed of an inorganic silicon compound material.

8. The method according to claim 7 , wherein the inorganic silicon compound material is silicon nitride.

9. The method according to claim 8 , wherein the step of removing the patterned isolation layer comprises:
corroding and removing the patterned isolation layer via hydrofluoric acid.

10. The method according to claim 1 , wherein the graphene layer is formed on a substrate.

11. The method according to claim 1 , wherein the material of the isolation layer is a metal material.

12. The method according to claim 11 , wherein the metal material comprises any one of copper, nickel or copper-nickel alloy.

13. A method for manufacturing a display substrate, comprising manufacturing a structure formed of the patterned graphene layer by the method according to claim 1 .

14. A method for patterning a graphene layer, comprising:
forming an isolation layer on the graphene layer;
forming a photoresist layer on the isolation layer;
patterning the photoresist layer;
etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer;
etching the graphene layer according to the patterned isolation layer to form a patterned graphene layer; and
removing the patterned isolation layer,
wherein the method further comprises:
forming the graphene layer on a resin base before forming the isolation layer on the graphene layer; and
forming a resin film with the patterned graphene layer after removing the patterned isolation layer.

15. The method according to claim 14 , wherein the step forming the graphene layer on the resin base comprises:
spin-coating a single-layer or multiple layers of water-soluble graphene material on the resin base to form the graphene layer.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Shu Shi
• Lv Zhijun
• Gu Jingxia
• Shi Yue
• Zhang Fangzhen
• Sun Bing
• Xu Chuanxiang

Classifications

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P14/416

  of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers · CPC title

• H10W70/664 Primary

  Carbon-based materials, e.g. fullerenes · CPC title

• H10W20/067 Primary

  by modifying the pattern of conductive parts · CPC title

• H10P76/202

  for lift-off processes · CPC title