Target for PVD sputtering system

Patent metadata

Field	Value
Publication number	US-9633824-B2
Application number	US-201313785866-A
Country	US
Kind code	B2
Filing date	Mar 5, 2013
Priority date	Mar 5, 2013
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

Embodiments of apparatus for physical vapor deposition are provided. In some embodiments, a target assembly for use in a substrate processing system to process a substrate includes a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a first side bonded to the target supporting surface, wherein a diameter of the target is greater than the first diameter of the target supporting surface.

First claim

The invention claimed is:

1. A substrate processing apparatus, comprising:
a chamber body having a substrate support disposed therein;
a power source coupled to the chamber body to form a plasma within the chamber body;
a target assembly coupled to the chamber body opposite the substrate support, wherein the target assembly comprises;
a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter measured at an interface of the target and the target supporting surface and is bounded by a first edge and a groove disposed along an outer periphery of the second side; and
a target having a first side bonded to the target supporting surface and an opposing second side facing the substrate support, and wherein the first diameter of the target supporting surface is about 97 to about 99 percent of the diameter of the target measured at the interface of the target and the target supporting surface, and wherein the second side of the target is disposed parallel to the substrate support; and

a dark space shield having an inner wall disposed about an outer edge of the target, wherein the inner wall of the dark space shield and the outer edge of the target define a gap between the outer edge of the target and the inner wall of the dark space shield having a distance of about 0.040 to about 0.090 inches.

2. The apparatus of claim 1 , wherein the target is one of tantalum, titanium, cobalt, copper, aluminum, silicon, or niobium.

3. The apparatus of claim 1 , wherein the thickness of the target is about 0.10 to about 0.35 inches.

4. The apparatus of claim 1 , further comprising a groove disposed along an outer periphery of the second side and a seal disposed in the groove.

5. The apparatus of claim 4 , wherein the groove further comprises a surface textured with silicon carbide.

6. The apparatus of claim 5 , wherein the surface of the groove further comprises a surface roughness of about 200 to about 300 microns.

7. The apparatus of claim 1 , wherein the power source is a DC power source.

8. The apparatus of claim 1 , wherein the power source is an RF power source.

9. The apparatus of claim 1 , wherein the diameter of the target is between about 17.40 to about 17.60 inches.

10. The apparatus of claim 1 , wherein the first diameter of the target supporting surface is about 17.38 to about 17.58 inches.

11. A substrate processing apparatus, comprising:
a chamber body having a substrate support disposed therein;
a power source coupled to the chamber body to form a plasma within the chamber body;
a target assembly coupled to the chamber body opposite the substrate support, wherein the target assembly comprises;
a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter measured at an interface of the target and the target supporting surface and is bounded by a first edge and a groove disposed along an outer periphery of the second side; and
a target having a first side bonded to the target supporting surface and an opposing second side facing the substrate support, and wherein the first diameter of the target supporting surface is about 97 to about 99 percent of the diameter of the target measured at the interface of the target and the target supporting surface, and wherein the second side of the target is disposed parallel to the substrate support.

12. The apparatus of claim 11 , wherein the target is one of tantalum, titanium, cobalt, copper, aluminum, silicon, or niobium.

13. The apparatus of claim 11 , wherein the thickness of the target is about 0.10 to about 0.35 inches.

14. The apparatus of claim 11 , further comprising a seal disposed in the groove.

15. The apparatus of claim 14 , wherein the groove further comprises a surface textured with silicon carbide.

16. The apparatus of claim 15 , wherein the surface of the groove further comprises a surface roughness of about 200 to about 300 microns.

17. The apparatus of claim 11 , wherein the diameter of the target is about 17.40 to about 17.60 inches.

18. The apparatus of claim 11 , wherein the first diameter of the target supporting surface is about 17.38 to about 17.58 inches.

Assignees

• Applied Materials Inc
• Applied Materials Inc

Inventors

• Nguyen Thanh X
• Cao Yong
• Rasheed Muhammad
• Tang Xianmin

Classifications

• H01J37/3414

  Targets · CPC title

• Y10T428/21

  Circular sheet or circular blank · CPC title

• H01J37/3417

  Arrangements · CPC title

• H01J37/32403

  Treating multiple sides of workpieces, e.g. 3D workpieces · CPC title

• C23C14/3407

  Cathode assembly for sputtering apparatus, e.g. Target · CPC title